公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | [1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy | Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung | Microelectronics Journal | | | |
2003 | 1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties | M.-H. Mao; T.-Y. Wu; F.-Y. Chang; HAO-HSIUNG LIN | The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. | | | |
2004 | 1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy | Liu, P.-W.; Liao, G.-H.; HAO-HSIUNG LIN | Electronics Letters | 6 | 4 | |
2002 | 1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE | L. W. Sung; G. Tsai; HAO-HSIUNG LIN | OPT’02 | | | |
2004 | 1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy | P. W. Liu; G. H. Liao; HAO-HSIUNG LIN | Electronics Letters. | | 4 | |
2003 | 1.3m GaAsSb/GaAs single quantum well laser diode | G. H. Liao; P. W. Liu; HAO-HSIUNG LIN | OPT’03 | | | |
2002 | 1.3m InAs/InGaAs quantum dot lasers grown by GSMBE | F. Y. Chang; T. C. Wu; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2002 | 1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE | L. W. Sung; G. Tsai; HAO-HSIUNG LIN | 2002 IEDMS | | | |
1999 | 1.55m asymmetric coupled quantum well structure for laser-modulator integration | L. W. Sung; J. S. Wang; H. P. Shiao; C. Y. Wang; I. F. Jang; T. T. Shih; Y. K. Tu; HAO-HSIUNG LIN | 1999 Electron Devices and Materials Symposia | | | |
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; C. T. Wan; HAO-HSIUNG LIN | Microelectronics Journal | | | |
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; HAO-HSIUNG LIN | 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS) | | | |
2007 | [111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy | L. C. Chou; HAO-HSIUNG LIN | MBE Taiwan 2007 | | | |
2009 | A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species | Y. T. Lin; T. C. Ma; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | | | |
2003 | A study of optical properties of InGaAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN | Journal of the Korean Physical Society | | | |
2012 | A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells | H. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN | International electron devices and materials symposium | | | |
2006 | A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | OPT2006 | | | |
1999 | Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance | YANG-FANG CHEN ; D. Y. Lin; Y. S. Huang; M. C. Chen; HAO-HSIUNG LIN ; JEN-CHEN FAN | Journal of Applied Physics | 3 | 3 | |
1989 | Abrupt heterointerfaces in Al <inf>0.35</inf> Ga <inf>0.65</inf> As/Al <inf>0.05</inf> Ga <inf>0.95</inf> As/Al <inf>0.35</inf> Ga <inf>0.65</inf> As quantum well structure grown by liquid-phase epitaxy | Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 5 | 3 | |
1990 | Abrupt Heterointerfaces in Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy | Chen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Applied Physics | | | |
1989 | Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy | Chen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Appllied Physics | | | |