Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2007 | Weak localization and electron-electron interaction effects in Al 0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates | Chen, K.Y.; CHI-TE LIANG ; Chen, N.C.; Chang, P.H.; Chang, C.-A. | Chinese Journal of Physics | 8 |