公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1993 | Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors | Huang, Chao-Hsing; Lin, Hao-Hsiung | Solid-State Electronics | 11 | 11 | |
1992 | High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy | Lin, Hao-Hsiung ; Huang, Chao-Hsing | Fourth International Conference on Indium Phosphide and Related Materials | 0 | 0 | |
1996 | Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors | Jang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung ; Huang, Chao-Hsing | Solid-State Electronics | 0 | 0 | |
1995 | Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs | Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung | Solid-State Electronics | 8 | 4 | |