公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; MINGHWEI HONG ; others | Journal of Vacuum Science & Technology B | | | |
1999 | Development of an integrated earthquake early warning system in Taiwan-Case for the Hualien area earthquakes | YIH-MIN WU ; Chung, Jen-Kuang; Shin, Tzay-Chyn; Hsiao, Nai-Chi; Tsai, Yi-Ben; Lee, William HK; Teng, Ta-liang; others | Terrestrial Atmospheric and Oceanic Sciences | | | |
2003 | Direct determination of the stacking order in Gd ${$sub 2$}$ O ${$sub 3$}$ epi-layers on GaAs. | Yacoby, Y; Sowwan, M; Pindak, R; Cross, J; Walko, D; Stern, E; Pitney, J; MacHarrie, R; MINGHWEI HONG ; Clarke, R; others | | | | |
1987 | Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox | Ekin, JW; Braginski, Alex; er I; Panson, AJ; Janocko, MA; Capone II, DW; Zaluzec, NJ; Fl; ermeyer, B; De Lima, OF; MINGHWEI HONG ; Kwo, J; others | Journal of Applied Physics | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; MINGHWEI HONG ; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others | Electron Device Letters, IEEE | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; MINGHWEI HONG ; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | MINGHWEI HONG ; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; MINGHWEI HONG ; Ng, KK; others | Applied Physics Letters | | | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; MINGHWEI HONG ; others | Electron Device Letters, IEEE | | | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; others | Journal of electronic materials | | | |
2010 | Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; MINGHWEI HONG ; Kwo, J; Dekoster, J; Caymax, M; others | Device Research Conference 2010 | | | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | MINGHWEI HONG ; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
2005 | Growth rate effects on InGaAs/GaAs quantum dots | Huang, CY; Ou, TM; Chang, WT; Wu, MC; Shen, JJ; Liang, CY; Lin, SY; Chang, P; Lin, TD; MINGHWEI HONG ; others | MBE-Taiwan | | | |
2011 | H 2 S molecular beam passivation of Ge (001) | Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; MINGHWEI HONG ; Kwo, J; Meuris, M; others | Microelectronic Engineering | | | |
1988 | High T c superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; MINGHWEI HONG ; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others | Thin Film Processing and Characterization of High-Temperature Superconductors | | | |
1988 | High T/sub c/superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; MINGHWEI HONG ; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others | AIP Conference Proceedings | | | |
2005 | High-quality nanothickness single-crystal Sc2O3 film grown on Si (111) | MINGHWEI HONG ; Kortan, AR; Chang, P; Huang, YL; Chen, CP; Chou, HY; Lee, HY; Kwo, J; Chu, M-W; Chen, CH; others | Applied Physics Letters | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |
2007 | III? V Metal? Oxide? Semiconductor Field-Effect Transistors with High? Dielectrics | MINGHWEI HONG ; Kwo, J Raynien; Tsai, Pei-chun; Chang, Yaochung; Huang, Mao-Lin; Chen, Chih-ping; others | Japanese journal of applied physics | | | |
2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | MINGHWEI HONG ; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | MRS Proceedings | | | |