公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Advance in next century nano CMOSFET research and its future prospect for industry | Hwang, HL; Chiou, YK; Chang, CH; Wang, CC; Lee, KY; Wu, TB; Kwo, RN; MINGHWEI HONG ; Chang-Liao, KS; Lu, CY; others | 13 th International conference on Solid Films and Suefaces | | | |
2007 | Advance in next Century nanoCMOSFET research | Hwang, Huey-Liang; Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; MINGHWEI HONG ; Chang-Liao, Kuei-Shu; Lu, Chun-Yuan; others | Applied Surface Science | | | |
2003 | Advances in high $κ$ gate dielectrics for Si and III-V semiconductors | Kwo, J; MINGHWEI HONG ; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others | Journal of Crystal Growth | | | |
2002 | Advances in high & kappa gate dielectrics for Si and III-V semiconductors | Kwo, J; MINGHWEI HONG ; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others | 2002 International Conference on Molecular Beam Epitaxy | | | |
2003 | Combinatorial method in adjoint linear systems on toric varieties | HUI-WEN LIN ; others | Michigan Mathematical Journal | | | |
1990 | Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors | Hasnain, G; Tai, K; Wynn, JD; Wang, YH; Fischer, RJ; MINGHWEI HONG ; Wier, BE; Zydzik, GJ; Mannaerts, JP; Gamelin, J; others | Electronics Letters | | | |
2011 | Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation | Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; MINGHWEI HONG ; Dekoster, J; others | Surface Science | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others | Device Research Conference Digest 1997 | | | |
2005 | Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; MINGHWEI HONG ; others | Journal of Vacuum Science & Technology B | | | |
1999 | Development of an integrated earthquake early warning system in Taiwan-Case for the Hualien area earthquakes | YIH-MIN WU ; Chung, Jen-Kuang; Shin, Tzay-Chyn; Hsiao, Nai-Chi; Tsai, Yi-Ben; Lee, William HK; Teng, Ta-liang; others | Terrestrial Atmospheric and Oceanic Sciences | | | |
2003 | Direct determination of the stacking order in Gd ${$sub 2$}$ O ${$sub 3$}$ epi-layers on GaAs. | Yacoby, Y; Sowwan, M; Pindak, R; Cross, J; Walko, D; Stern, E; Pitney, J; MacHarrie, R; MINGHWEI HONG ; Clarke, R; others | | | | |
1987 | Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox | Ekin, JW; Braginski, Alex; er I; Panson, AJ; Janocko, MA; Capone II, DW; Zaluzec, NJ; Fl; ermeyer, B; De Lima, OF; MINGHWEI HONG ; Kwo, J; others | Journal of Applied Physics | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; MINGHWEI HONG ; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others | Electron Device Letters, IEEE | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; MINGHWEI HONG ; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | MINGHWEI HONG ; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; MINGHWEI HONG ; Ng, KK; others | Applied Physics Letters | | | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; MINGHWEI HONG ; others | Electron Device Letters, IEEE | | | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; others | Journal of electronic materials | | | |
2010 | Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; MINGHWEI HONG ; Kwo, J; Dekoster, J; Caymax, M; others | Device Research Conference 2010 | | | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | MINGHWEI HONG ; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others | IEEE International Symposium on Compound Semiconductors, 1997 | | | |