公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2011 | Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 5 | ||
2009 | Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures | P. Sitarek; H. P. Hsu; Y. S. Huang; J. M. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | Journal of Applied Physics. | 8 | ||
2009 | The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2010 | The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | 22nd International Conference on Indium Phosphide and Related Materials (IPRM) |