公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1996 | C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications | Passlack, M; MINGHWEI HONG ; Mannaerts, JP | Solid-State Electronics | | | |
1995 | Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures | Passlack, M; MINGHWEI HONG ; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC | Journal of Applied Physics | | | |
2000 | Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY | Journal of Vacuum Science & Technology B | | | |
1997 | Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy | Hwang, Jenn-Shyong; Chou, WY; Chang, GS; Tyan, SL; MINGHWEI HONG ; Mannaerts, JP; Kwo, J | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
1995 | Coherent oscillations in semiconductor microcavities | Wang, Hailin; Shah, Jagdeep; Damen, TC; Jan, WY; Cunningham, JE; MINGHWEI HONG ; Mannaerts, JP | Physical Review B | | | |
1990 | Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors | Hasnain, G; Tai, K; Wynn, JD; Wang, YH; Fischer, RJ; MINGHWEI HONG ; Wier, BE; Zydzik, GJ; Mannaerts, JP; Gamelin, J; others | Electronics Letters | | | |
2001 | CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density | Lay, TS; Liu, WD; MINGHWEI HONG ; Kwo, J; Mannaerts, JP | Electronics Letters | | | |
2001 | CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density | Lay, TS; Liu, WD; MINGHWEI HONG ; Kwo, J; Mannaerts, JP | Electronics Letters | | | |
2002 | DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; Bude, J | 24th Annual Gallium Arsenide Integrated Circuit Symposium, 2002 | | | |
1995 | Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs | Mills Jr, AP; MINGHWEI HONG ; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE | Journal of Applied Physics | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; MINGHWEI HONG ; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY | Solid-State Electronics | | | |
1997 | DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION | Ren, F; MINGHWEI HONG ; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP | Electrochemical Society ( ECS ) Proceedings | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others | Device Research Conference Digest 1997 | | | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Yi Chun; MINGHWEI HONG ; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY | Electron Device Letters, IEEE | | | |
1998 | Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide | MINGHWEI HONG ; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK | Journal of Vacuum Science & Technology B | | | |
2005 | Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy | Lay, TS; Liao, YY; Hung, Wei-Hsiu; MINGHWEI HONG ; Kwo, J; Mannaerts, JP | Journal of Crystal Growth | | | |
1993 | Design optimization for high power and high speed surface-emitting lasers | Gamelin, J; Lin, J; Lau, KY; MINGHWEI HONG ; Mannaerts, JP | Conference on Lasers and Electro-Optics | | | |
1994 | Dielectric properties of electron-beam deposited Ga2O3 films | Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Fischer, RJ | Applied Physics Letters | | | |
1994 | Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells | Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; MINGHWEI HONG ; Mannaerts, JP; Bhat, R | Photonics Technology Letters, IEEE | | | |
1989 | Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-Implantation | Bode, M; Ourmazd, A; Rentschler, JA; MINGHWEI HONG ; Feldman, LC; Mannaerts, JP | MRS Proceedings | | | |