公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors | CHEE-WEE LIU ; Lu, T.M.; Pan, W.; Tsui, D.C.; Lee, C.-H.; CHEE-WEE LIU | Physical Review B - Condensed Matter and Materials Physics | | | |
2010 | Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure | CHEE-WEE LIU ; Lu, T.M.; Lee, C.-H.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2012 | Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures | CHEE-WEE LIU ; Huang, S.-H.; Lu, T.-M.; Lu, S.-C.; Lee, C.-H.; Liu, C.W.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2009 | Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2 /V s | CHEE-WEE LIU ; Lu, T.M.; Tsui, D.C.; Lee, C.-H.; CHEE-WEE LIU | Applied Physics Letters | | | |
2011 | Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors | CHEE-WEE LIU ; Lu, T.M.; Lee, C.-H.; Huang, S.-H.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | | | |