公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 |