Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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1993 | Material and electrical properties of highly mismatched In <inf>x</inf>Ga<inf>1-x</inf>As on GaAs by molecular-beam epitaxy | Chang, S.-Z.; Chang, T.-C.; Shen, J.-L.; Lee, S.-C.; YANG-FANG CHEN ; SI-CHEN LEE | Journal of Applied Physics | 24 | 24 | |
1996 | A method to tune the island size and improve the uniformity for the in situ formation of InGaAs quantum dots on GaAs | Chang, S.-Z.; Chang, T.-C.; SI-CHEN LEE | Applied Surface Science | 5 | 5 | |
1993 | Novel binary buffer layers for applications in the heteroepitaxy of highly mismatched In <inf>0.53</inf> Ga <inf>0.47</inf> As epilayers grown on GaAs substrates | Chang, S.-Z.; Lee, S.-C.; Shiao, H.-P.; Lin, W.; Tu, Y.-K.; SI-CHEN LEE | Applied Physics Letters |