公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2008 | Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; MINGHWEI HONG | Journal of Vacuum Science & Technology B |