| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2015 | The demonstra tion of UltraHigh Dielectric Constant with the propelling of the magnetic complex thin film | 廖洛漢 ; 洪銘輝 | | | | |
| 2015 | The demonstration of a D-SMT stressor on Ge planer n-MOSFETs | M. H.Liao ; P.-G. Chen | AIP Advances | | | |
| 2013 | The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design | Liao, M.H.; MING-HAN LIAO | Thin Solid Films | 5 | 5 | |
| 2014 | The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | Liao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C. | Symposium on VLSI Technology | 3 | 0 | |
| 2014 | The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design | M. H.Liao ; S.-C. Huang | Applied Physics Letters | | | |
| 2014 | The demonstration of D-SMT stressor on Si and Ge n-FinFETs | Liao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. | Symposium on VLSI Technology | 6 | 0 | |
| 2015 | The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs | M. H.Liao ; P.-G. Chen | IEEE Transactions on Nanotechnology | 2 | 1 | |
| 2018 | The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors | Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H. | IEEE Transactions on Electron Devices | 2 | 3 | |
| 2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong | Asia-Pacific Radio Science Conference | | | |
| 2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | Liao, M.-H. ; Chen, C.-H.; Lee, J.J.; Chen, K.C.; Liang, J.H. | 2013 e-Manufacturing and Design Collaboration Symposium | 0 | 0 | |
| 2015 | The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme | Liao, M.-H.; Huang, S.C.; MING-HAN LIAO | Applied Physics Letters | 4 | 2 | |
| 2015 | The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme | M. H.Liao ; P.-G. Chen | Applied Physics Letters | | | |
| 2015 | The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor | M. H.Liao ; S.-C. Huang | AIP Advances | | | |
| 2015 | The demonstration of the novel nanotube Si device with the promising device performance behavior | M. H.Liao ; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | | | |
| 2015 | The demonstration of the Si nano-tube device with the promising short channel control | M. H.Liao ; P.-G. Chen | Journal of Applied Physics | | | |
| 2009 | The dependence of the performance of strained NMOSFETs on channel width | Yeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; Liang, M.S. | IEEE Transactions on Electron Devices | 3 | 3 | |
| 2015 | The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs | M. H.Liao ; P.-G. Chen | Applied Physics Letters | | | |
| 2008 | Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors | Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; Liu, C.W.; MING-HAN LIAO | Journal of Applied Physics | 8 | 7 | |
| 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. | M. H.Liao ; H.-W. Hsuh; C.-C. Lee | Vacuum | | | |
| 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO | Vacuum | 1 | 1 | |
