公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Growth of InAs quantum dots with light emission at 1.3 m | F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan | | | |
2004 | Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm | F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN | 2004 IEDMS | | | |
2001 | Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy | J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2001 | Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy | Wang, Jyh-Shyang; Lin, Hao-Hsiung ; Song, Li-Wei; Chen, Guan-Ru | Journal of Vacuum Science & Technology | 27 | 23 | |
2003 | Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy | G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN | OPT’03 | | | |
2005 | Growth of InPSb on InAs inside a miscibility gap using gas source MBE | G. Tsai; H. H. Lin; HAO-HSIUNG LIN | OPT2005 | | | |
1991 | Heavily Doping of GaAs with be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detector | Liu, P. D.; Shieh, T. H.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | The 1991 International Conference on Solid State Devices and Materials | | | |
2010 | Hetero-epitaxy of InAs on patterened Si (100) substrates | Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN | 2010 international electron devices and materials symposia | | | |
2021 | High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls | Hou W.-C; Shih P.-C; Wu B.B.-R; HAO-HSIUNG LIN ; JIUN-YUN LI | IEEE Transactions on Electron Devices | 2 | 1 | |
1993 | High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy | Huang, Chen-Chih; Lin, Hao-Hsiung | Solid-State Electronics | 1 | 0 | |
1981 | High Frequency Characteristics of Some Thick Film Components | Chang, C. Y.; 林浩雄 ; 王維新; Chiou, Y. L.; Lin, Hao-Hsiung ; Wang, Way-Seen | 7th EDMS | | | |
1992 | High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy | Wu, Chung Cheng; Lee, Si-Chen ; Lin, Hao-Hsiung | Japanese Journal of Applied Physics | 2 | 1 | |
2001 | High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs | H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN | IEICE Transactions on Electronics | | 4 | |
2004 | High SCR design for one-transistor split-gate full-featured EEPROM | Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN | IEEE Electron Device Letters | 4 | 4 | |
1992 | High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy | Lin, Hao-Hsiung ; Huang, Chao-Hsing | Fourth International Conference on Indium Phosphide and Related Materials | 0 | 0 | |
2016 | Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy | Yang, C.-W.; Chen, W.-C.; Lin, H.-H.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | 0 | 0 | |
2003 | Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers | Sung, L.W.; HAO-HSIUNG LIN | Applied Physics Letters | 49 | 44 | |
1988 | The hot electron effect in double heterojunction bipolar transistors: Theory and experiment | Chen, Chung-Zen; Lee, Si-Chen ; Lin, Hao-Hsiung | Solid-State Electronics | 2 | 1 | |
1980 | An Improvement on the LPE Process for Growing P-AlGaAs on N-GaAs | Lin, Hao-Hsiung | 6th EDMS | | | |
2010 | In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor | Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN | IEEE Electron Device Letters | 2 | 2 | |