公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | OPT2007 | | | |
2007 | Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | | | |
2005 | Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy | P. W. Liu; G. Tsai; H. H. Lin; T. Krier; HAO-HSIUNG LIN | OPT2005 | | | |
1994 | Photoreflectance Characterization of an InAlAs/InGaAs Heterojunction Bipolar Transistor | Lin, Hao-Hsiung ; Chang, Chien-Cheng; Hsu, K. T.; Chen, Y. H.; Chen, K. L.; Chen, H. P.; ?��???:rp07554; ?��?? | Applied Physics Letters | | | |
1994 | Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor | Hsu, K.T.; Chen, Y.H.; Chen, K.L.; Chen, H.P.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN | Applied Physics Letters | | | |
1998 | Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes | Chan, C.H.; Chen, Y.F.; Chen, M.C.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Journal of Applied Physics | 9 | 9 | |
1997 | Photoreflectance study of barrier-width dependence of above-barrier states in GaAs-AlxGa1-xAs multiple quantum wells | YANG-FANG CHEN ; HAO-HSIUNG LIN | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1 | 1 | |
1994 | Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs Heterostructures | Hwang, J. S.; Tyan, S. L.; Chou, W. Y.; Lee, M. L.; Weybume, D.; Hang, Z.; Lee, T. L.; Lin, Hao-Hsiung | Applied Physics Letters | 18 | 18 | |
2004 | Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy | C. M. Lai; F. Y. Chang; G. J. Jan; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 0 | 0 | |
1995 | Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers | Chen, K.L.; Lin, H.H.; Jan, G.J.; Chen, Y.H.; Tseng, P.K.; HAO-HSIUNG LIN | Journal of Applied Physics | | | |
2009 | Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, | H. P. Hsu; Y. N. Huang; Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; K. K. Tiong; P. Sitarek; J. Misiewicz; HAO-HSIUNG LIN | Physica Status Solidi (A) Applications and Materials Science | | 0 | |
2020 | Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers | Talwar D.N; Lin H.-H; Feng Z.C.; HAO-HSIUNG LIN | Materials Chemistry and Physics | | | |
2014 | Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate | C. Y. Tsai; B. Xin; Z. C. Feng; Y. M. Zhang; R. X. Jia; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
2011 | Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures | Y. W. Tai; C. C. Yang; M. H. Yang; C. S. Hong; H. H. Lin; B. Z. Wan; HAO-HSIUNG LIN | Journal of the Taiwan Institute of Chemical Engineers | | 6 | |
1992 | Preparation and Properties of Lattice-Matched InAlAs and InAlGaAs Epilayers on (100) InP | Lee, T. L.; 林浩雄 ; Lin, Hao-Hsiung | 1992 International Electron Devices and Materials Symposium | | | |
2008 | Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure | HAO-HSIUNG LIN | American Physical Society spring meeting 2008 (APS2008) | | | |
2004 | Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy | T. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 16 | 15 | |
2013 | Properties of Variable Al Content of AlGaN Layers Grown by MOCVD | C. X. Wang; F. D. Li; S. C. Wang; M. Zhu; X. Zhang; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | OPTIC 2013, optics and photonics Taiwan, international conference 2013 | | | |
1993 | Proximity Contact Effect on the DC Characteristics of InGaAs-Based Bipolar Transistors | Huang, Chang-Hsiu; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung | 19th EDMS | | | |
1997 | Pump-probe studies of carrier capture processes in semiconductor multiple-quantum-well waveguides | JIAN-JANG HUANG ; DING-WEI HUANG ; Chao, Chung-Yen; Li, Jiun-Haw; CHIH-CHUNG YANG ; Chen, Ming-Ching; HAO-HSIUNG LIN | IEEE Photonics Technology Letters | 0 | 0 | |