公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | Sb-based zincblende alloys with strong structural disorder | HAO-HSIUNG LIN | Indo-Taiwan workshop on nanodevices | | | |
2018 | Selective area growth of InAs nanowires from SiO<inf>2</inf>/Si(1?1?1) templates direct-written by focused helium ion beam technology | Yang, C.-W.; Chen, W.-C.; Chou, C.; HAO-HSIUNG LIN | Journal of Crystal Growth | | | |
2012 | Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution | S. H. Li; C. J. Wu; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | | | |
1998 | Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy | Chen, M.-C.; Lin, H.-H.; Shie, C.-W.; HAO-HSIUNG LIN | Journal of Applied Physics | | | |
1998 | Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy | Chen, Ming-Chin; Liao, M. C.; Lin, Hao-Hsiung | Journal of Crystal Growth | 4 | 4 | |
2012 | Short channel effects on gallium nitride/gallium oxide nanowire transistors | Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO ; HAO-HSIUNG LIN ; LUNG-HAN PENG ; YUH-RENN WU | Applied Physics Letters | 20 | 19 | |
2013 | Short range structure of dilute nitride GaAsSbN | H. H. Lin; C. L. Chiou; Y. T. Lin; T. C. Ma; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | Physics and Mechanics of New Materials and Their Applications | | | |
2013 | Short range structure of dilute nitride GaAsSbN | Lin, H.-H.; Chiou, C.-L.; Lin, Y.-T.; Ma, T.-C.; Wu, J.-S.; Feng, Z.-C.; HAO-HSIUNG LIN | Physics and Mechanics of New Materials and Their Applications | | | |
2012 | Short range structure of dilute nitride GaAsSbN | H. H. Lin; C. L. Chiou; Y. T. Lin; T. C. Ma; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | Russia-Taiwanese Symposium, Physics and mechanics of new materials and their applications | | | |
2011 | Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy | Y. T. Lin; J. S. Wu; Z. C. Feng; HAO-HSIUNG LIN | 2011 International electron devices and materials symposia | | | |
2004 | Shrinkable triple self-aligned field-enhanced split-gate flash memory | Chu, Wen-Ting; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN | IEEE Transactions on Electron Devices | 23 | 19 | |
2002 | Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well | Hang, D.R.; Huang, C.F.; Hung, W.K.; Chang, Y.H.; Chen, J.C.; Yang, H.C.; Chen, Y.F.; Shih, D.K.; Chu, T.Y.; Lin, H.H.; YUAN-HUEI CHANG ; HAO-HSIUNG LIN ; YANG-FANG CHEN | Semiconductor Science and Technology | 12 | 7 | |
1990 | Single and Mulitiple AlGaAs Quantum-Well Structures Grown by Liquid-Phase Epitaxy | Chen, J. A.; Wang, Cheng-Kun; 林浩雄 ; 王維新; 李嗣涔 ; Lee, Si-Chen | Journal of Applied Physics | | | |
1990 | Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy | Chen, J.-A.; Wang, C.-K.; Lin, H.-H.; Wang, W.-S.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 4 | 4 | |
2018 | A single nano-void precisely positioned in SiO<inf>2</inf>/Si substrate by focused helium ion beam technique | Yang, C.-W.; Chou, C.; Chen, W.-C.; HAO-HSIUNG LIN | Vacuum | | | |
2012 | Slanted InAs nanowires gorwn by GSMBE | W. C. Chen; L. H. Chen; Y. T. Lin; HAO-HSIUNG LIN | OPTIC 2012, optics and photonics Taiwan, international conference 2012 | | | |
2018 | Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms | Talwar, D.N.; Wan, L.; Tin, C.-C.; Feng, Z.C.; HAO-HSIUNG LIN | Applied Surface Science | 6 | 5 | |
2015 | A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD | Xin, B.; Jia, R.-X.; Hu, J.-C.; Tsai, C.-Y.; Lin, H.-H.; Zhang, Y.-M.; HAO-HSIUNG LIN | Applied Surface Science | | | |
2018 | Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector | Hao-Kai Hsieh; Chieh Chou; Hao-Hsiung Lin; Jiunn-Jye Luo; Shao-Yi Li; HAO-HSIUNG LIN | 2018 7th International Symposium on Next Generation Electronics | 1 | 0 | |
2007 | Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors | Y. R. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |