公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | Structural properties of GaAsSb grown on GaAs | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |
2012 | Structural properties of InAs nanowires grown by GSMBE | W. C. Chen; L. H. Chen; Y. T. Lin; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | | | |
2016 | Structural properties of InAs nanowires on (001) Si | Chen, W.-C.; Chen, L.-H.; Lin, Y.-T.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | | | |
2016 | Structure of GaAsN alloy within miscibility gap | Wu, H.-M.; Lin, K.-I.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | | | |
1992 | Studies of Low-Surface 2-KT Recombination Current of the Emitter-Base Heterojunction of Heterojunction Bipolar Transistors | Wu, Chung Cheng; Ting, Jing-Lung; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Applied Physics | | | |
1990 | Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors | Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 5 | 5 | |
1993 | Studies of Two-Photon Transition Nonlinearities Near Half the Band Gap in Semiconductor Based on AlGaAs for Nonlinear Switching | Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung | Conference on Lasers and Electro-Optics | | | |
1999 | Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells | G. R. Chen; J. S. Wang; HAO-HSIUNG LIN | Optics and Photonics/Taiwan'99 | | | |
1998 | Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs | Kuo, C.W.; Su, Y.K.; Tsia, C.Y.; HAO-HSIUNG LIN | Solid-State Electronics | 7 | 7 | |
2015 | Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques | H. P. Hsu; J. D. Wu; Y. J. Lin; Y. S. Huang; Y. R. Lin; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 1 | 1 | |
1995 | Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance | Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; YANG-FANG CHEN ; HAO-HSIUNG LIN | Applied Physics Letters | 5 | 5 | |
2014 | Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer | T. H. Huang; W. C. Chen; K. C. Chen; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
2003 | Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance | Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung ; Chen, Ming-Ching | Japanese Journal of Applied Physics | 3 | 3 | |
1996 | A study of the dark currents of InSb charge injection devices | Sun, T.P.; Liao, R.H.; Wang, C.H.; Hong, H.M.; Chang, H.; Wu, C.W.; Liu, J.S.; HAO-HSIUNG LIN | Optical and Quantum Electronics | | | |
2014 | Study of twin defects in (111)B GaAsSb by X-ray diffraction | S. C. Chen; Y. H. Lin; HAO-HSIUNG LIN | IEDMS 2014, international electron devices and materials symposium | | | |
2004 | Study on high-power resonant-cavity light-emitting diodes | L. C. Chou; B. L. Yen; J. D. Juang; H. T. Jan; HAO-HSIUNG LIN | OPT 2004 | | | |
2005 | Study on the band line-up of GaAsSb/GaAs quantum wells | C. L. Tsai; P. W. Liu; G. H. Liao; M. H. Lee; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
1991 | Study on the Charge Transient Spectroscopy of Au/Cr/Sio2/N-Insb MIS Capacitor | Wu, C. W.; 林浩雄 ; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Lin, Hao-Hsiung ; Yang, Seng-Jenn | 17th EDMS | | | |
1991 | A Study on the Fabrication of AlGaAs/GaAs Nonabsorption Mirror Laser Diode | Cheng, S. J.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
2012 | Study on the lattice structure of InAsPSb grown on GaAs | G. T. Chen; C. J. Wu; Z. C. Feng; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |