公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1995 | Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance | Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; YANG-FANG CHEN ; HAO-HSIUNG LIN | Applied Physics Letters | 5 | 5 | |
2014 | Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer | T. H. Huang,; W. C. Chen,; K. C. Chen,; H. H. Lin,; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
2003 | Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance | Hwang, Jenn-Shyong; Chen, Mei-Fei; Lin, Kuang-I; Tsai, Chiang-Nan; Hwang, Wen-Chi; Chou, Wei-Yang; Lin, Hao-Hsiung ; Chen, Ming-Ching | Japanese Journal of Applied Physics | 3 | 3 | |
1996 | A study of the dark currents of InSb charge injection devices | Sun, T.P.; Liao, R.H.; Wang, C.H.; Hong, H.M.; Chang, H.; Wu, C.W.; Liu, J.S.; Lin, H.H.; HAO-HSIUNG LIN | Optical and Quantum Electronics | 0 | 0 | |
2014 | Study of twin defects in (111)B GaAsSb by X-ray diffraction | S. C. Chen,; Y. H. Lin,; H. H. Lin,; HAO-HSIUNG LIN | IEDMS 2014, international electron devices and materials symposium | | | |
2004 | Study on high-power resonant-cavity light-emitting diodes | L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN | OPT 2004 | | | |
2005 | Study on the band line-up of GaAsSb/GaAs quantum wells | C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
1991 | Study on the Charge Transient Spectroscopy of Au/Cr/Sio2/N-Insb MIS Capacitor | Wu, C. W.; 林浩雄 ; Lin, J. H.; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Lin, Hao-Hsiung ; Yang, Seng-Jenn | 17th EDMS | | | |
1991 | A Study on the Fabrication of AlGaAs/GaAs Nonabsorption Mirror Laser Diode | Cheng, S. J.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
2012 | Study on the lattice structure of InAsPSb grown on GaAs | G. T. Chen,; C. J. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |
2011 | Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy | C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN | 2011 International electron devices and materials symposia | | | |
2012 | Study on the structural properties of InP0.52Sb0.48 on GaAs | C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |
2005 | Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers | C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN | 2005 EDMS | | | |
1985 | Super-Gain AlGaAs/GaAs Heterojunction Bipolar Transistors Using an Emitter Edge-Thinning Design | Lin, Hao-Hsiung ; Lee, Si-Chen | Applied Physics Letters | 121 | 117 | |
2008 | Surface and material characteristics of Ga<inf>2</inf>O<inf>3</inf> thin films on GaAs | Huang, P.-F.; Chen, Y.-T.; Lee, H.Y.; Feng, Z.C.; Lin, H.-H.; Lu, W.; HAO-HSIUNG LIN | Proceedings of SPIE - The International Society for Optical Engineering | 3 | 0 | |
2019 | Surface/structural characteristics and band alignments of thin Ga <inf>2</inf> O <inf>3</inf> films grown on sapphire by pulse laser deposition | Yang, H.; Qian, Y.; Zhang, C.; Wuu, D.-S.; Talwar, D.N.; Lin, H.-H.; Lee, J.-F.; Wan, L.; He, K.; Feng, Z.C.; HAO-HSIUNG LIN | Applied Surface Science | 54 | 50 | |
2010 | Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy | Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan | | | |
2018 | Synchrotron radiation X-Ray absorption spectroscopy and spectroscopic ellipsometry studies of insb thin films on GaAs grown by metalorganic chemical vapor deposition | Qian, Y.; Liang, Y.; Luo, X.; He, K.; Sun, W.; Talwar, D.N.; Chan, T.-S.; Ferguson, I.; Wan, L.; Yang, Q.; Feng, Z.C.; HAO-HSIUNG LIN | Advances in Materials Science and Engineering | 5 | 6 | |
2004 | Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers | G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN | 2004 IEDMS | | | |
1997 | Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses | Dai, Y.T.; Fan, J.C.; Chen, Y.F.; Lin, R.M.; Lee, S.C.; YANG-FANG CHEN ; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 126 | 122 | |