Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2009 | Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | MBE Taiwan 2009 | | | |
2009 | Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD | Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | | | |
2006 | Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa(1?x)As measured by picosecond ultrasonics | Wen, Yu-Chieh; Chou, Li-Chang; Lin, Hao-Hsiung ; Lin, Kung-Hsuan; Kao, Tzeng-Fu; Sun, Chi-Kuang | Journal of Applied Physics | | | |
2006 | Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics | Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; CHI-KUANG SUN ; HAO-HSIUNG LIN ; CHI-KUANG SUN | Journal of Applied Physics | | 9 | |
2003 | Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells | H. P. Hsu; Y. S. Huang; P. W. Liu; HAO-HSIUNG LIN | OPT’03 | | | |
2002 | Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE | Sung, Li-Wei; Lin, Hao-Hsiung ; Chia, Chih-Ta | Journal of Crystal Growth | 13 | 11 | |
2002 | Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | Journal of Crystal Growth | | 11 | |
2001 | Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | Optics and Photonics Taiwan | | | |
1986 | Current Transport Across the Emitter-Base Potential Spike in AlGaAs/GaA Heterojunction Bipolar Transistors | 李嗣涔 ; Kau, J. N.; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Applied Physics | | | |
1985 | Current transport across the emitter-base potential spike in AlGaAs/GaAs heterojunction bipolar transistors | Lee, S.-C.; Kau, J.-N.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 12 | 11 | |
1991 | Current transport characteristics of P+/N Al<inf>x</inf>Ga<inf>1-x</inf>As homojunction diodes | Lin, H.-H.; Liu, Y.-S.; HAO-HSIUNG LIN | Journal of Applied Physics | | | |
1992 | Current Transport Characteristics of P+/N AlxGa1-XAs Homojunction Diode | 林浩雄 ; Liu, Y. S.; Lin, Hao-Hsiung | Journal of Applied Physics | | | |
1991 | Current Transport Characteristics Of P+/N-AlxGa1-xAs Homojunction Diode | 林浩雄 ; Liu, Y. S.; Lin, Hao-Hsiung | 1990 International Electron Devices and Materials Symposium | | | |
1994 | Current Transport in Charge Injection Devices | Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung | SPIE International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Application | 0 | 0 | |
1993 | Dark Current Analysis of InSB MIS Capacitors | Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung | 19th EDMS | | | |
1993 | DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors | Huang, Chang-Hsiu; Lee, T. L.; 林浩雄 ; Lin, Hao-Hsiung | The 5th International Conference on InP and Related Material | | | |
1993 | Deep Level Analysis of MBE Grown InAlAs Strained Layers | Liu, J. S.; Lee, T. L.; 林浩雄 ; Wu, C. W.; Lin, Hao-Hsiung | 19th EDMS | | | |
2012 | Defects probing by temperature dependence Raman scattering of GaAsSbN | J. Wu; Y. T. Lin; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | | | |
1995 | Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance | YANG-FANG CHEN ; Dai, Y.T.; JEN-CHEN FAN ; Lee, T.L.; HAO-HSIUNG LIN | Applied Physics Letters | 14 | 12 | |
2008 | Design and fabrication of AlGaAs ambient light detectors | T. C. Lin; T. C. Ma; HAO-HSIUNG LIN | IEEE Photonics Technology Letters | | | |