公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1987 | Design of AlGaAs Double Heterojunction Bipolar Transistors | Chen, C. Z.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Applied Physics | | | |
1987 | Design of n-p-n AlGaAs double-heterojunction bipolar transistors | Chen, C.-Z.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 4 | 3 | |
1984 | Determination of AlGaAs Γ15-Γ1 Band Gap Energy by Schottky Barrier Spectral Response Measurement | 林浩雄 ; Lin, J. S.; Chiou, H. K.; 李嗣涔 ; Lin, Hao-Hsiung ; Lee, Si-Chen | Annual Meeting of the Chinese Material Science Association | | | |
1986 | Determination of Alxga1-XAs Band Gap by Schottky Barrier Spectral Response Measurement | Lin, Hao-Hsiung ; Lee, Si-Chen | Journal of Chinese Institute Engineers | | | |
1986 | Determination of augai-xas bandgap by schottky barrier spectral response measurement | Lin, H.-H.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
2007 | Determination of interband transition dipole moment of InAs/InGaAs quantum dots from modal absorption spectra | Wu, D.-C.; Kao, J.-K.; Mao, M.-H.; Chang, F.Y.; MING-HUA MAO ; HAO-HSIUNG LIN | Conference on Lasers and Electro-Optics, 2007, CLEO 2007 | 0 | 0 | |
1986 | Determination of the AlGaAs Bandgap by Spectral Response Measurement | Lin, Hao-Hsiung ; Lee, Si-Chen | Journal of the Chinese Institute of Engeneers | | | |
2008 | Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance | S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Thin Solid Films | 11 | 11 | |
1987 | Determine the Minority Carrier Lifetime in P/N Junction Diode Using the Lag Effect of a CID Emulator | Tseng, Y. H.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
2007 | Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m | C. K. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2008 | Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy | H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN | MBE Taiwan 2008 | | | |
1985 | Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single Heterojunction Bipolar Transistors | Lin, Hao-Hsiung ; Lee, Si-Chen | IEEE Electron Device Letters | | | |
1985 | Direct Measurement of the Potential Spike Energy in AlGaAs/GaAs Single-Heterojunction Binolar Transistors | Lin, H.-H.; SI-CHEN LEE ; HAO-HSIUNG LIN | IEEE Electron Device Letters | 29 | 29 | |
1997 | Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor. A subpicosecond Raman probe | Tsen, K.T.; Ferry, D.K.; Wang, J.-S.; Huang, C.-H.; HAO-HSIUNG LIN | Physica Status Solidi (B) Basic Research | | | |
2013 | Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation | K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN | Applied Physics Express | | 15 | |
1984 | Dual Wavelength Photodetector and Its Application on Wavelength-Division Multiplexing Technology | Lin, Hao-Hsiung ; Lee, Si-Chen | 1984 International Electronic Devices and Materials Symposium | | | |
2008 | Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers | Y. R. Lin; J. H. Chu; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan (OPT’08) | | | |
2008 | Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN | S. P. Wang; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | | | |
May | Effect of deposition method on the density of InAs/InGaAs quantum dot | Chang, Fu-Yu; Wu, T.C.; Lin, Hao-Hsiung | International Conference onIndium Phosphide and Related Materials | 0 | 0 | |
2014 | Effect of focued ion beam imaging process on the crystallinity of InAs | T. H. Huang; W. C. Chen; K. C. Chen; HAO-HSIUNG LIN | IEDMS 2014, international electron devices and materials symposium | | | |