公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1980 | An Improvement on the LPE Process for Growing P-AlGaAs on N-GaAs | Lin, Hao-Hsiung | 6th EDMS | | | |
2010 | In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor | Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN | IEEE Electron Device Letters | 2 | 2 | |
1991 | In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitax | Chen, M. K.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | The 17th EDMS | | | |
1992 | InAlAs/InGaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy | Lin, Hao-Hsiung | Annual Meeting of the Chinese Physics Association | | | |
1991 | InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy | Huang, Chang-Hsiu; Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
1993 | InAlAs/InGaAs異質接面雙極電晶體之研究 | 林浩雄 | | | | |
2003 | InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy | F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN | Electron devices and materials symposium | | | |
2006 | InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer | C. S. Lee; F. Y. Chang; D. S. Liu; HAO-HSIUNG LIN | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2 | 2 | |
2005 | InAs/InGaAs/GaAs coupled quantum-dot laser | C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
2001 | InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m | Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN | Electronics Letters | 33 | 37 | |
2001 | InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm | Shih, Ding-Kang; Lin, Hao-Hsiung ; Lin, Y.H. | Electronics Letters | | | |
2001 | InAsN Grown by Plasma-assisted Gas Source MBE | D. K. Shih,; H. H. Lin,; T. Y. Chu,; T. R. Yang,; HAO-HSIUNG LIN | 2001 MRS Fall meeting, Symposium H | | | |
1999 | InAsN quantum wells grown on InP by gas source MBE | J. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN | 3rd international conference on mid-infrared optoelectronics materials and devices | | | |
2003 | InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers | D.-K. Shih; Y.-H. Lin; K.-H. Chiang; HAO-HSIUNG LIN | The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003 | 1 | 0 | |
1999 | InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy | J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN | 1999 Electron Devices and Materials Symposia | | | |
2006 | InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy | G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | 14th international conference on molecular beam epitaxy | | | |
2007 | InAsPSb quaternary alloy grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | 10 | 9 | |
2006 | InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy | G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |
2010 | InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy | C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN | 2010 internal conference on optics and photonics in Taiwan | | | |
2015 | InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm | Lin, Y.-C.; Mao, M.-H.; Wu, C.-J.; Lin, H.-H.; MING-HUA MAO ; HAO-HSIUNG LIN | Optics Letters | 3 | 3 | |