公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2016 | Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy | Xin, B.; Zhang, Y.-M.; Wu, H.-M.; Feng, Z.C.; Lin, H.-H.; Jia, R.-X.; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 4 | 2 | |
2004 | Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillations | Hang, D.R.; D. K. Shih; C. F. Huang; W. K. Hung; Y. H. Chang; HAO-HSIUNG LIN ; YANG-FANG CHEN | Physica E: Low-Dimensional Systems and Nanostructures | 8 | 7 | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN | 1999 IEDM | 0 | 0 | |
2012 | Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy | C. L. Chiou,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN | OPTIC 2012 | | | |
1996 | Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors | Jang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung ; Huang, Chao-Hsing | Solid-State Electronics | 0 | 0 | |
2010 | Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy | Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2004 | Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy | Chang, F.Y.; Lee, J.D.; Lin, H.H.; HAO-HSIUNG LIN | Electronics Letters | 7 | 6 | |
2002 | Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy | Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung ; Chen, Jhe-Ren | Electronics Letters | 17 | 16 | |
2002 | Low-threshold ~1.3m GaAsSb quantum well laser | P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN | 2002 IEDMS | | | |
1997 | Lumped-Element Compensated High/Low-Pass
Balun Design for MMIC Double-Balanced Mixer | Chiou, Wann-Kaeo; Lin, Hao-Hsiung ; Chang, Chi-Yang | IEEE Microwave and Guided Wave Letters | | | |
1997 | Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer | Chiou, H.-K.; Lin, H.-H.; Chang, C.-Y.; HAO-HSIUNG LIN | IEEE Microwave and Guided Wave Letters | 45 | 0 | |
2012 | MBE growth of InAs nanowires on Si | L. H. Chen,; Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |
2004 | MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications | G. Tsai,; H. H. Lin; HAO-HSIUNG LIN | OPT 2004 | | | |
2006 | MBE growth of quaternary InAsPSb alloy | H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |
1993 | Measurements of Two-Photon Absorption Coefficient and Induced Nonlinear Refractive-Index in GaAs/AlGaAs Multiquantum Well Waveguide | Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung | Electronics Letters | | | |
1993 | Measurements of two-photon absorption coefficient and induced nonlinear refractive-index in GaAs/AlGaAs multiquantum well waveguides | Yang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN | Electronics Letters | 18 | 13 | |
2000 | Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well | JEN-CHEN FAN ; Hung, W.K.; YANG-FANG CHEN ; Wang, J.S.; HAO-HSIUNG LIN | Physical Review B - Condensed Matter and Materials Physics | | | |
2006 | Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes | A. Krier; M. Stone; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | 22 | 19 | |
2010 | Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy | S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2006 | Mid-infrared InAsPSb/InAsSb quantum-well light emitter | C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |