公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2000 | A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs | Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG | IEEE/Cornell Conference on High Performance Devices, 2000 | 5 | | |
1997 | A Ga 2 O 3 passivation technique compatible with GaAs device processing | Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG | Solid-State Electronics | | | |
2018 | A new stable, crystalline capping material for topological insulators | Lin, H.Y.; Cheng, C.K.; Chen, K.H.M.; Tseng, C.C.; Huang, S.W.; Chang, M.T.; Tseng, S.C.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | APL Materials | 7 | 6 | |
2007 | A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics | Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | A novel approach of using a MBE template for ALD growth of high-庥 dielectrics | Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG | Journal of Crystal Growth | 9 | 9 | |
2006 | A Novel Template Approach by MBE for ALD Growth of High k Dielectrics | Lee, KY; Lee, WC; Hung, ML; Lee, YC; Chang, CH; Chiou, YK; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
1991 | A periodic index separate confinement heterostructure quantum well laser | Wu, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; Sergent, AM; MINGHWEI HONG | Applied Physics Letters | | | |
1991 | A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors | Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
1987 | A Versatile new Metallo-Organic Spin-on Process for Preparing Superconducting Thin films | Gross, ME; Hong, M; Liou, S; Gallagher, PK; MINGHWEI HONG | MRS Proceedings | | | |
2010 | A15 SUPERCONDUCTORS THROUGH DIRECT SOLID-STATE PRECIPITATION: V3Ga AND N63AI | Hong, Minghwei; MINGHWEI HONG | Lawrence Berkeley National Laboratory | | | |
1980 | A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/Al | Hong, MINGHWEI; MINGHWEI HONG | | | | |
2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As | Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letter | | | |
2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As | Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | 47 | 40 | |
2008 | Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As | Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Achieving a low interfacial density of states in atomic layer deposited Al<inf>2</inf> O<inf>3</inf> on In<inf>0.53</inf> Ga<inf>0.47</inf> As | Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 60 | 52 | |
2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-$κ$ Ga2O3 (Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Applied Physics Express | | | |
2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-kappa Ga2O3(Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J.Raynien; MINGHWEI HONG | Applied Physics Express | 10 | 10 | |
2010 | Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT | Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG | Device Research Conference 2010 | | | |
2010 | Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT | Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 2 | 0 | |
2009 | Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG | Device Research Conference, 2009 | | | |