公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electronics Letters | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
2007 | Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a dielectric insulator for GaAs device applications | Lay, T.S.; Hong, M.; Mannaerts, J.P.; Liu, C.T.; Kwo, J.; Ren, F.; Marcus, M.A.; Ng, K.K.; Chen, Y.K.; Chou, L.J.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
1999 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> )/GaAs power MOSFETs | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Electronics Letters | 18 | 18 | |
2007 | Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG | Applied Physics Letters | 27 | 25 | |
1995 | Ga203 films for electronic and optoelectronic ap | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2009 | Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices | Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
1995 | Ga2O3 films for electronic and optoelectronic applications | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
1995 | GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES | Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG | Compound Semiconductors, 1994 | | | |
2009 | Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices | Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 31 | 31 | |
1997 | Ga2O3/GaAs depletion mode MOSFET | Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Workshop on Native Oxides of Compound semiconductors | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; Hong, M; Ng, KK; others; MINGHWEI HONG | Applied Physics Letters | 311 | 280 | |
2017 | GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> | Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Crystal Growth | 8 | 6 | |
1998 | GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3) as gate oxide | Kim, S-J; Park, J-W; Hong, M; Mannaerts, JP; MINGHWEI HONG | Circuits, Devices and Systems, IEE Proceedings | | | |
1998 | GaAs MOSFET using MBE-grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate oxide | Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | IEE Proceedings: Circuits, Devices and Systems | 5 | 5 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG | IEEE Electron Device Letters | 225 | | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG | Electron Device Letters, IEEE | 227 | 193 | |