公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1988 | Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y 2 Ba 5 Cu 7 O/sub x/films | Kwo, J; Hong, M; Fleming, RM; Hebard, AF; M; ich, ML; DeSantolo, AM; Davidson, BA; Marsh, P; Hobbins, ND; MINGHWEI HONG | | | | |
1988 | Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y2Ba5Cu7Ox films | Kwo, J; Hong, M; Fleming, RM; Hebard, AF; M; ich, ML; DeSantolo, AM; Davidson, BA; Marsh, P; Hobbins, ND; MINGHWEI HONG | Applied Physics Letters | | | |
1986 | Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice | Majkrzak, CF; Cable, JW; Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Waszczak, JV; Vettier, C; MINGHWEI HONG | Physical Review Letters | | | |
1999 | Observation of Brillouin-zone folded magnon dispersion curves in magnetic superlattices by inelastic neutron scattering | Schreyer, A; Erwin, R; Lee, SH; Majkrzak, CF; Hong, M; Kwo, J; MINGHWEI HONG | European conference on neutron scattering ECNS'99 | | | |
1996 | Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
1996 | Observation of inversion layers at GA<inf>2</inf>O<inf>3</inf>-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 2 | 2 | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG | Applied Physics Letters | 22 | 23 | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films | Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG | Applied Physics Letters | | | |
2014 | Observation of strongly enhanced inverse spin Hall voltage in Fe <inf>3</inf> Si/GaAs structures | Hung, H.Y.; Chiang, T.H.; Syu, B.Z.; Fanchiang, Y.T.; Lin, J.G.; Lee, S.F.; Hong, M.; MINGHWEI HONG ; Lin, J. G. | Applied Physics Letters | 6 | 6 | |
2014 | Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures | Hung, HY; Chiang, TH; Syu, BZ; Fanchiang, YT; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
1990 | Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctions | Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG | Applied Physics Letters | | | |
1990 | Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctions | Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG | Applied Physics Letters | | | |
2002 | Optical properties of gallium oxide thin films | Rebien, M; Henrion, W; Hong, M; Mannaerts, JP; Fleischer, M; MINGHWEI HONG | Applied Physics Letters | 215 | 208 | |
2003 | Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs | Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; Hong, Minghwei; Kwo, J Raynien; Yang, Bin; Mannaerts, JP; MINGHWEI HONG | IEEE Transactions on Electron Devices | 31 | 30 | |
2012 | Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device | Chang, W.H.; Chiang, T.H.; Lin, T.D.; Chen, Y.H.; Wu, K.H.; Huang, T.S.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | 9 | 9 | |
2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures | Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 12 | 13 | |
2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1998 | Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance | Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; others; MINGHWEI HONG | Journal of Applied Physics | 6 | 6 | |
1988 | Oxygen defect in YBa 2 Cu 3 O x: An x-ray photoemission approach | Ford, WK; Chen, CT; erson, J; Kwo, J; Liou, Sy\\_Hwang; Hong, M; Rubenacker, GV; Drumheller, JE; MINGHWEI HONG | Physical Review B | | | |