| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2005 | Abnormal hole mobility of biaxial strained Si | Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 19 | 20 | |
| 2017 | The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect | Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO | Vacuum | 0 | 0 | |
| 2017 | The achievement of the super short channel control in the magnetic Ge nFinFETs with the negative capacitance effect | M. H.Liao ; H.-Y. Huang; F.-A. Tsai; C.-C. Chuang; M.-H. Hsu; C.-C. Lee; M.-H. Lee; C. Lien; C.-F. Hsieh; T.-C. Wu; H.-S. Wu; C.-W. Yao | Vacuum | | | |
| 2012 | Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs | Liao, M.-H.; Chen, Chih Hua; Chang, Li Cheng; Yang, Chen; Kao, Ssu Chieh; Liao, M.-H. | IEEE Transactions on Electron Devices | 7 | 6 |  |
| 2012 | Additional nitrogen ion-implantation treatment in STI to relax the intrinsic compressive stress for n-MOSFETs | Liao, M.-H. ; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C. | IEEE Transactions on Electron Devices | 7 | 6 | |
| 1996 | Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function method | Ma, C.-C.; CHIEN-CHING MA ; MING-HAN LIAO | Journal of Pressure Vessel Technology, Transactions of the ASME | 6 | 6 | |
| 1996 | Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function method | Ma, C.-C.; Liao, M.-H.; MING-HAN LIAO | Journal of Pressure Vessel Technology, Transactions of the ASME | 6 | 6 | |
| 2010 | Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress | Chun-Heng Chen; Ming Han Liao; Fu-Chien Chiu; Huey-Liang Hwang; MING-HAN LIAO | J. Appl. Phys | | | |
| 2010 | Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress | Chen, C.-H.; Liao, M.H.; Chiu, F.-C.; Hwang, H.-L.; MING-HAN LIAO | Journal of Applied Physics | 1 | 1 | |
| 2014 | Analyzing Si-SiGe thin-film solar cell by simulation and calculation | Hsieh, C.-F.; Li, Y.-T.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. | 2014 IEEE 40th Photovoltaic Specialist Conference | 0 | 0 | |
| 2012 | Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment | C.-H. Chen; M.-H. Liao; K.-R. Lee; W.-S. Hong; K.-S. Liao; M.-C. Hung; W.-S. Wang; MING-HAN LIAO | 第十六屆非破壞檢測技術研討會暨年會論文競賽 | | | |
| 2019 | Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs | Lee M.H; MING-HAN LIAO ; CHEE-WEE LIU et al. | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
| 2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H. | Electrochemical Society | 5 | | |
| 2007 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H.; Liao, M.H. ; Hung, T.-A.; Deng, Y.; Liu, C.W. | 2007 7th IEEE International Conference on Nanotechnology | 0 | 0 | |
| 2008 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; Liu, C.W. | IEEE Transactions on Electron Devices | 3 | 3 | |
| 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, K.-F.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 12 | 11 | |
| 2006 | Buckling characteristics of SiGe layers on viscous oxide | Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; Liao, M.H.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 3 | 3 | |
| 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Chang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; MING-HAN LIAO ; MING-HAN LIAO | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 2 | 0 | |
| 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Chang, Shu-Tong; Liao, Ming-Han; Lee, Chang-Chun; Huang, Jacky; Wang, Wei-Ching; Hsieh, Bing-Fong; MING-HAN LIAO | Journal of Vacuum Science & Technology B | 2 | 0 | |
| 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Shu-Tong Chang; Ming-Han Liao; Chang-Chun Lee; Jacky Huang; Bing-Fong Hsieh; MING-HAN LIAO | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | | | |
