| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2020 | The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System | Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | The demonstration of a D-SMT stressor on Ge planer n-MOSFETs | M. H.Liao ; P.-G. Chen | AIP Advances | | | |
| 2013 | The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design | MING-HAN LIAO ; MING-HAN LIAO | Thin Solid Films | 5 | 5 | |
| 2020 | The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs | Lu P.-Y; Yen C.-M; Chang S.-Y; Feng Y.-J; Lien C; Hu C.-W; Yao C.-W; Lee M.-H; Liao M.-H.; MING-HAN LIAO | Technical Digest - International Electron Devices Meeting, IEDM | 3 | 0 | |
| 2020 | The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance | Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO | IEEE Transactions on Electron Devices | 4 | 4 | |
| 2014 | The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | Liao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C. | Symposium on VLSI Technology | 4 | 0 | |
| 2014 | The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO | 2014 Symposium on VLSI Technology (VLSI-technology) | | | |
| 2014 | The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design | M. H.Liao ; S.-C. Huang | Applied Physics Letters | | | |
| 2014 | The demonstration of D-SMT stressor on Si and Ge n-FinFETs | Liao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. | Symposium on VLSI Technology | 6 | 0 | |
| 2015 | The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs | M. H.Liao ; P.-G. Chen | IEEE Transactions on Nanotechnology | 2 | 1 | |
| 2018 | The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors | Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H. | IEEE Transactions on Electron Devices | 7 | 7 | |
| 2018 | The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors | C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
| 2022 | The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology | Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong | AIP Advances | 3 | 2 | |
| 2013 | The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via) | Liao, M.-H. ; Chen, C.-H.; Lee, J.J.; Chen, K.C.; Liang, J.H. | 2013 e-Manufacturing and Design Collaboration Symposium | 0 | 0 | |
| 2015 | The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme | Liao, M.-H.; Huang, S.C.; MING-HAN LIAO | Applied Physics Letters | 6 | 3 | |
| 2015 | The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme | M. H.Liao ; P.-G. Chen | Applied Physics Letters | | | |
| 2015 | The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor | M. H.Liao ; S.-C. Huang | AIP Advances | | | |
| 2015 | The demonstration of the novel nanotube Si device with the promising device performance behavior | M. H.Liao ; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | | | |
| 2015 | The demonstration of the Si nano-tube device with the promising short channel control | M. H.Liao ; P.-G. Chen | Journal of Applied Physics | | | |
