| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. | M. H.Liao ; H.-W. Hsuh; C.-C. Lee | Vacuum | | | |
| 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO | Vacuum | 1 | 1 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments | Huang L.-T.; Chang M.-L.; Huang J.-J.; Kuo C.-L.; Lin H.-C.; Liao M.-H.; Lee M.-H.; HSIN-CHIH LIN ; MING-HAN LIAO ; CHIN-LUNG KUO ; MIIN-JANG CHEN | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2012 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments | M. H.Liao ; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen | Journal of Physics D: Applied Physics | | | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO<inf>2</inf> gate dielectrics by post-deposition remote N<inf>2</inf>, N<inf>2</inf>/H<inf>2</inf>, and NH<inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2011 | The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks | Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO | Solar Energy Materials and Solar Cells | 14 | 10 | |
| 2016 | Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressors | Lee, C.-C.; Hsieh, C.-P.; Liao, M.-H. ; Cheng, S.-W.; Guo, Y.-H. | 2014 IEEE International Nanoelectronics Conference | 1 | 0 | |
| 2007 | Electrically pumped Ge laser at room temperature | Cheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H. ; Hung, T.A.; CHEE-WEE LIU | International Electron Devices Meeting | 9 | 0 | |
| 2005 | Electroluminescence from metal/oxide/strained-Si tunneling diodes | Liao, M.H.; Chen, M.-J.; Chen, T.C.; Wang, P.-L.; Liu, C.W.; MING-HAN LIAO | Applied Physics Letters | 64 | 42 | |
| 2007 | Electroluminescence from strained SiGe quantum dot light-emitting diodes | Cheng, T.-H.; Liao, M.H. ; Liu, C.W. | 2007 7th IEEE International Conference on Nanotechnology | 0 | 0 | |
| 2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | Liao, M.H. ; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W. | Third International SiGe Technology and Device Meeting | 0 | | |
| 2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO | IEEE Electron Device Letters | | | |
| 2006 | Electroluminescence from the Ge quantum dot MOS tunneling diodes | Liao, M.H. ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; Liu, C.W. | IEEE Electron Device Letters | 29 | 28 | |
| 2015 | Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" | Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; MING-HAN LIAO ; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036] | Liao, M.-H.; Chen, C. H.; Chang, L. C.; Yang, C.; Kao, S. C.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117)) | Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2015 | Erratum: “The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique” [AIP Advances 3(7), 072117 (2013)] | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2013 | Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance | Liao, M.-H.; Chang, L.C.; MING-HAN LIAO | Applied Physics Letters | 9 | 7 | |
| 2013 | Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free process | Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 1 | 1 | |
| 2013 | Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process | M. H.Liao ; P.-G. Chen | Journal of Physics D: Applied Physics | | | |
