| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2019 | Ferro-electric HfZrO2 FETs for steep switch onset | K.-T. Chen; MING-HAN LIAO et al. | Microelectronic Engineering | | | |
| 2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU et al. | International Electron Devices Meeting | 20 | 0 | |
| 2017 | Ferroelectric Al:HfO2 Negative Capacitance FETs | M. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. Liu | International Electron Devices Meeting | | | |
| 2018 | Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation Applications | Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S. | 2018 IEEE Electron Devices Technology and Manufacturing Conference | 2 | 0 | |
| 2018 | Ferroelectric HfZrO <sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | Chen, Kuan-Ting; Gu, Siang-Sheng; Wang, Zheng-Ying; Liao, Chun-Yu; Chou, Yu-Chen; Hong, Ruo-Chun; Chen, Shih-Yao; Chen, Hong-Yu; Siang, Gao-Yu; Lo, Chieh; Chen, Pin-Guang; Liao, M.-H.; Li, Kai-Shin; Chang, Shu-Tong; Lee, Min-Hung; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | 14 | 14 | |
| 2018 | Ferroelectric HfZrO&#x2093; FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; MING-HAN LIAO ; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | 14 | 14 | |
| 2020 | Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training | Hsiang K.-Y; MING-HAN LIAO et al. | IEEE Transactions on Electron Devices | 22 | 19 | |
| 2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | 6 | 5 | |
| 2018 | Ferroelectric HfZrOx FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | K.-T. Chen; MING-HAN LIAO et al. | IEEE Journal of the Electron Devices Society | | | |
| 2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
| 2016 | Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships | M. H.Liao ; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | | | |
| 2016 | Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships | Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO | Thin Solid Films | 3 | 2 | |
| 2017 | Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design) | Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T. | Future Technologies Conference | 0 | 0 | |
| 2010 | High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effect | Liao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO | IEEE Photovoltaic Specialists Conference | 0 | 0 | |
| 2015 | The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate | M. H.Liao ; S.-C. Huangn; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | | | |
| 2014 | High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) | Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M. | ECS Transactions | 1 | 0 | |
| 2011 | High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effect | Han Liao, M.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | 3 | 4 | |
| 2013 | Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | M. H.Liao ; C.-H. Chen | AIP Advances | | | |
| 2013 | Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2019 | Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping Electrode | Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO | 2019 Electron Devices Technology and Manufacturing Conference | 13 | 0 | |
