| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2013 | Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | M. H.Liao ; C.-H. Chen | AIP Advances | | | |
| 2013 | Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2019 | Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping Electrode | Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO | 2019 Electron Devices Technology and Manufacturing Conference | 13 | 0 | |
| 2014 | The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy | Hsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. | International Journal of Automation and Smart Technology | 0 | 0 | |
| 2017 | In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Chen, P.-G.; Tang, M.; Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO | Solid-State Electronics | 5 | 5 | |
| 2021 | In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering | Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO | Nanomaterials | 2 | 2 | |
| 2017 | In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics | M. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee | Solid State Electronics | | | |
| 2017 | In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO | Solid-State Electronics | 5 | 5 | |
| 2019 | Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering | Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO | Coatings | 4 | 5 | |
| 2006 | Infrared emission from Ge metal-insulator-semiconductor tunneling diodes | Liao, M.H.; Cheng, T.-H.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 29 | 31 | |
| 2006 | Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes | M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | | | |
| 2007 | The intermixing and strain effects on electroluminescence of SiGe dots | Liao, M.H.; Lee, C.-H.; Hung, T.A.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 29 | 29 | |
| 2009 | An investigation about the limitation of strained-Si technology | Liao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO | International Symposium on VLSI Technology, Systems, and Applications | 1 | 0 | |
| 2020 | The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors | Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2011 | The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H.; Chen, C.H.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | 20 | 18 | |
| 2010 | The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H. ; Ho, W.S.; Chen, Y.-Y.; Chang, S.T. | IEEE Photovoltaic Specialists Conference | 0 | 0 | |
| 2017 | The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO | AIP Advances | | | |
| 2017 | The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltages | Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO | AIP Advances | 1 | 1 | |
| 2017 | The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M. H.Liao ; C.-P. Hsieh; C.-C. Lee | AIP Advances | | | |
| 2016 | The investigation of the diameter dimension effect on the Si nano-tube transistors | M. H.Liao ; C.-H. Yeh; C.-C. Lee; C.-P. Wang | AIP Advances | | | |
