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  1. NTU Scholars
  2. Research Outputs

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0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 121 to 140 of 208 < previous   next >
Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
2009Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelizationM. H. Liao; MING-HAN LIAO J. Appl. Phys
2011Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelizationLiao, M.H. ; Chang, L.C.2011 International Semiconductor Device Research Symposium00
2012Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelizationM.-H. Liao; MING-HAN LIAO The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
2016MAGNET IC CAPACIT OR STRUCT URESM.H.Liao ; C.Hsieh; C.Chen
2014Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistorsM. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. HwangOptics Express 
2018Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: ReplyLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO Optics Express00
2014Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistorsLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO Optics Express5248
2016MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the SameM.H.Liao ; M.Hongh
2021Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devicesHu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO Coatings33
2012Nano-textured photonic crystal light-emitting diodes and solar cellsM.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO 2012 International Conference on Solid State Devices and Materials (SSDM)
2016Narrow channel width effect modificati on in a shallow trench isolation deviceM. H.Liao ; T.L. Lee
2017Negative capacitance FETs with steep switching by ferroelectric Hf-based oxideMING-HAN LIAO et al. ; CHEE-WEE LIU et al. 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 201740
2015A non-linear analytic stress model for the analysis on the stress interaction between TSVsLiao, M.-H. ; Kao, S.-C.; Huang, S.-J.International Journal of Automation and Smart Technology 00
2019Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory ApplicationsChen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO IEEE Electron Device Letters5652
2019Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory ApplicationsK.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO IEEE Electron Device Letters
2013Nonlinear analytic model for the strain field induced by thermal copper filled TSVsM. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liange-Manufacturing & Design Collaboration Symposium 
2013The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual techniqueLiao, M.-H.; Chen, C.-H.; MING-HAN LIAO AIP Advances43
2013The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual techniqueLiao, M.-H. ; Chen, C.-H.; Kao, S.-C.International Journal of Heat and Mass Transfer 11
2005Novel schottky barrier strained germanium PMOSPeng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W.2005 International Semiconductor Device Research Symposium 2
2012A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior PerformanceM.-H. Liao; MING-HAN LIAO The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
Showing results 121 to 140 of 208 < previous   next >

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

總館學科館員 (Main Library)
醫學圖書館學科館員 (Medical Library)
社會科學院辜振甫紀念圖書館學科館員 (Social Sciences Library)

開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

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