Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2022 | Layout of 1.50-inch, 3207-ppi oled display with oslsi/silsi structure capable of division driving fabricated through vlsi process with side-by-side patterning by photolithography | Saito, Toshihiko; Mizuguchi, Toshiki; Okamoto, Yuki; Ito, Minato; Toyotaka, Kouhei; Kozuma, Munehiro; Matsuzaki, Takanori; Kobayashi, Hidetomo; Onuki, Tatsuya; Hiura, Yoshikazu; Hodo, Ryota; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Sato, Hitomi; Kimura, Hajime; Wu, Chih Chiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei | Digest of Technical Papers - SID International Symposium | 5 | 0 | |
2009 | Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization | M. H. Liao; MING-HAN LIAO | J. Appl. Phys | | | |
2012 | Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | | | |
2011 | Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization | Liao, M.H. ; Chang, L.C. | 2011 International Semiconductor Device Research Symposium | 0 | 0 | |
2016 | MAGNET IC CAPACIT OR STRUCT URES | M.H.Liao ; C.Hsieh; C.Chen | | | | |
2014 | Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors | M. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang | Optics Express | | | |
2018 | Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply | Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO | Optics Express | 0 | 0 | |
2014 | Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors | Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO | Optics Express | 59 | 54 | |
2016 | MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same | M.H.Liao ; M.Hongh | | | | |
2021 | Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devices | Hu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO | Coatings | 6 | 6 | |
2022 | Multi-Layer Chips on Wafer Stacking Technologies with Carbon Nano-Tubes as Through-Silicon Vias and it's potential applications for Power-Via technologies | Liao, Bo Zhou; Chen, Liang Hsi; Chen, Kai Cheng; Lin, Hong Yi; Tsai, Yi Ting; Chen, Ting Wei; Chan, Yi Cheng; Lee, Min Hung; MING-HAN LIAO | Proceedings - Electronic Components and Technology Conference | 3 | 0 | |
2012 | Nano-textured photonic crystal light-emitting diodes and solar cells | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2016 | Narrow channel width effect modificati on in a shallow trench isolation device | M. H.Liao ; T.L. Lee | | | | |
2017 | Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide | MING-HAN LIAO ; CHEE-WEE LIU | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 | 4 | 0 | |
2022 | Negative Schottky barrier height and surface inhomogeneity in n-silicon M-I-S structures | Harisha, C. P.; MING-HAN LIAO ; Kei, C. C.; Joshi, S. | AIP Advances | 1 | 0 | |
2015 | A non-linear analytic stress model for the analysis on the stress interaction between TSVs | Liao, M.-H. ; Kao, S.-C.; Huang, S.-J. | International Journal of Automation and Smart Technology | 0 | 0 | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | 69 | 69 | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications | K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO | IEEE Electron Device Letters | | | |
2013 | Nonlinear analytic model for the strain field induced by thermal copper filled TSVs | M. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang | e-Manufacturing & Design Collaboration Symposium | | | |
2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 4 | 3 | |