Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2012 | Nano-textured photonic crystal light-emitting diodes and solar cells | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2016 | Narrow channel width effect modificati on in a shallow trench isolation device | M. H.Liao ; T.L. Lee | | | | |
2017 | Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide | MING-HAN LIAO ; CHEE-WEE LIU | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 | 4 | 0 | |
2022 | Negative Schottky barrier height and surface inhomogeneity in n-silicon M-I-S structures | Harisha, C. P.; MING-HAN LIAO ; Kei, C. C.; Joshi, S. | AIP Advances | 1 | 0 | |
2015 | A non-linear analytic stress model for the analysis on the stress interaction between TSVs | Liao, M.-H. ; Kao, S.-C.; Huang, S.-J. | International Journal of Automation and Smart Technology | 0 | 0 | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | | | |
2019 | Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications | K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO | IEEE Electron Device Letters | | | |
2013 | Nonlinear analytic model for the strain field induced by thermal copper filled TSVs | M. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang | e-Manufacturing & Design Collaboration Symposium | | | |
2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | | | |
2013 | The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique | Liao, M.-H. ; Chen, C.-H.; Kao, S.-C. | International Journal of Heat and Mass Transfer | 1 | 1 | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | | |
2012 | A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | | | |
2012 | A novel stress design for the type-II hetero-junction solar cell with superior performance | Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH | Journal of Applied Physics | 6 | 4 | |
2012 | A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2012 | A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation | M. H.Liao ; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng | Journal of Physics D: Applied Physics | | | |
2012 | Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2008 | Optimal stress design in p-MOSFET with superior performance | Liao, M.H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
2013 | Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistors | Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; Kao, S.-C. | Japanese Journal of Applied Physics | 0 | 1 | |
2012 | The optimization of SiGe hetero-structure thin-film solar cell by the theoretical calculation and quantitative analysis | Liao, M.-H. ; Chen, Y.-Y.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Hsieh, C.-F. | 2012 International Silicon-Germanium Technology and Device Meeting | 0 | 0 | |
2014 | Optimized Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality by the process of low energy hydrogen plasma cleaning and investigation by Positron Annihilation spectroscopy | Hsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. | Procedia Engineering | 0 | 0 | |