Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2020 | p-type semi-transparent conductive NiO films with high deposition rate produced by superimposed high power impulse magnetron sputtering | Chuang, T.-H.; Wen, C.-K.; Chen, S.-C.; Liao, M.-H.; Liu, F.; Sun, H.; MING-HAN LIAO ; TUNG-HAN CHUANG | Ceramics International | | 10 | |
2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 21 | 0 | |
2021 | Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation | Lee C.-C; Hsieh C.-P; Huang P.-C; Liao M.-H.; MING-HAN LIAO | Applied Physics Express | | | |
2017 | Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures | Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO | Applied Physics Letters | | | |
2017 | Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures | M. H.Liao ; H.-I. Huang; C.-C. Chuang | Applied Physics Letters | | | |
2014 | Periodic nanostructured thin-film solar cells | Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H. | Advanced Materials Research | 0 | 0 | |
2016 | PET imaging of serotonin transporters with 4-[ 18 F]-ADAM in a parkinsonian rat model with porcine neural xenografts | Chiu C.-H.; Li I.-H.; Weng S.-J.; Huang Y.-S.; Wu S.-C.; Chou T.-K.; Huang W.-S.; Liao M.-H.; Shiue C.-Y.; Cheng C.-Y.; SHINN-CHIH WU ; Liao, M.-H. | Cell Transplantation | 7 | 6 | |
2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 91 | 0 | |
2018 | Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors | M. H.Liao ; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang | IEEE Transaction on Nanotech | | | |
2018 | Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field Sensors | Luong, V.S.; Su, Y.-H.; Lu, C.-C.; Jeng, J.-T.; Hsu, J.-H.; Liao, M.-H. ; Wu, J.-C.; Lai, M.-H.; CHING-RAY CHANG | IEEE Transactions on Nanotechnology | 21 | 21 | |
2006 | Promising a-Si:H TFTs with high mechanical reliability for flexible display | Lee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H. ; Yeh, Y.-H. | International Electron Devices Meeting | 11 | 0 | |
2015 | Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategies | Lee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C. | International Electron Devices Meeting | 87 | 0 | |
2015 | Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF | M. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen | IEEE Electron Device Meeting | | | |
2015 | Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF <0.2V, and Hysteresis-Free Strategies | M. H. Lee; MING-HAN LIAO | IEEE Electron Device Meeting (IEDM) 2015 | | | |
2015 | Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)] | Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C. | Japanese Journal of Applied Physics | 0 | 0 | |
2020 | The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology | Lu, P.-Y.; Li, Y.-R.; Yen, C.-M.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; C. ROBERT KAO | Proceedings - Electronic Components and Technology Conference | 4 | 0 | |
2013 | The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits | Liao, M.H.; MING-HAN LIAO | Journal of Applied Physics | | | |
2023 | Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals | Tsai, Y. T.; Basu, Nilabh; Chen, T.-W.; Chan, Y. C.; Lin, H.-Y.; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 0 | 0 | |
2012 | The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction | Liao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH | Journal of Applied Physics | 14 | 8 | |
2013 | Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design | M. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.Huang | IEEE Transaction on Electron Devices | 1 | | |