| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2020 | The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology | Lu, P.-Y.; Li, Y.-R.; Yen, C.-M.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; C. ROBERT KAO | Proceedings - Electronic Components and Technology Conference | 4 | 0 | |
| 2013 | The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits | Liao, M.H.; MING-HAN LIAO | Journal of Applied Physics | 7 | 7 | |
| 2012 | The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction | Liao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH | Journal of Applied Physics | 14 | 8 |  |
| 2013 | Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design | M. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.Huang | IEEE Transaction on Electron Devices | 1 | | |
| 2013 | The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs | M. H.Liao ; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong | Asia-Pacific Radio Science Conference | | | |
| 2013 | Residual stress of curvature sapphire substrate with GaN film released by the application of trench structures | Liao, M.-H. ; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; Hsieh, C.-F. | International Journal of Automation and Smart Technology | 0 | 0 | |
| 2013 | RETRACTED: The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design | Liao, M.H.; MING-HAN LIAO | Thin Solid Films | 5 | 5 | |
| 2018 | Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115] | Liao, M.H.; MING-HAN LIAO | Thin Solid Films | 0 | 0 | |
| 2018 | Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115](S0040609013007360)(10.1016/j.tsf.2013.04.100) | MING-HAN LIAO ; MING-HAN LIAO | Thin Solid Films | 0 | 0 | |
| 2016 | SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION | M. H.Liao | | | | |
| 2016 | Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors | Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO | Thin Solid Films | 0 | 0 | |
| 2011 | Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis | Chang, S.T.; Liao, M.H.; Lin, W.-K.; MING-HAN LIAO | Thin Solid Films | 31 | 28 | |
| 2012 | SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
| 2008 | SiGe/Si Quantum-Dot Infrared Photodetectors With δ Doping | Chu-Hsuan Lin; MING-HAN LIAO et al. | IEEE Nanotechnology | | | |
| 2008 | SiGe/Si quantum-dot infrared photodetectors with δ doping | Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; Liu, C.W. | IEEE Transactions on Nanotechnology | 6 | 6 | |
| 2016 | Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack | Liu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H. | Japanese Journal of Applied Physics | 30 | 20 | |
| 2013 | Solar cell composed of periodic nano-structure and SiGe/Si thin film | Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. | Conference Record of the IEEE Photovoltaic Specialists Conference | 0 | 0 | |
| 2013 | The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits | Liao, M.-H.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 2 | 2 | |
| 2018 | Steep switch-off of In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN on Si MIS-HEMT | Chen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H. ; Lee, M.H. | 2018 7th International Symposium on Next-Generation Electronics | 0 | 0 | |
| 2016 | STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors | M. H.Liao ; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | | | |
