| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2016 | SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION | M. H.Liao | | | | |
| 2016 | Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors | Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO | Thin Solid Films | 0 | 0 | |
| 2011 | Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis | Chang, S.T.; Liao, M.H.; Lin, W.-K.; MING-HAN LIAO | Thin Solid Films | 31 | 28 | |
| 2012 | SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
| 2008 | SiGe/Si Quantum-Dot Infrared Photodetectors With δ Doping | Chu-Hsuan Lin; MING-HAN LIAO et al. | IEEE Nanotechnology | | | |
| 2008 | SiGe/Si quantum-dot infrared photodetectors with δ doping | Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; Liu, C.W. | IEEE Transactions on Nanotechnology | 6 | 6 | |
| 2016 | Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack | Liu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H. | Japanese Journal of Applied Physics | 30 | 20 | |
| 2013 | Solar cell composed of periodic nano-structure and SiGe/Si thin film | Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. | Conference Record of the IEEE Photovoltaic Specialists Conference | 0 | 0 | |
| 2013 | The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits | Liao, M.-H.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 2 | 2 | |
| 2018 | Steep switch-off of In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN on Si MIS-HEMT | Chen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H. ; Lee, M.H. | 2018 7th International Symposium on Next-Generation Electronics | 0 | 0 | |
| 2016 | STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors | M. H.Liao ; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | | | |
| 2016 | STI stress modulation with additional implantati on and natural pad sin mask | M. H.Liao ; T.L. Lee; L.-Y.Yeh; M.S.Liang | | | | |
| 2010 | Strain engineering of nanoscale Si MOS devices | Huang, J.; Chang, S.-T.; Hsieh, B.-F.; Liao, M.-H.; Wang, W.-C.; Lee, C.-C.; MING-HAN LIAO | Thin Solid Films | 4 | 4 | |
| 2010 | Strain Engineering of Nanoscale Strained Si MOS Devices | B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO | Thin Solid Films | | | |
| 2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M.H. ; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W. | Third International SiGe Technology and Device Meeting | 0 | | |
| 2006 | strained Pt Schottky diodes on n-type Si and Ge | M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | | | |
| 2014 | Stress and curvature of periodic trench structures on Sapphire substrate with GaN film | Hsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. | Procedia Engineering | 0 | 0 | |
| 2012 | Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern | M.-H. Liao; MING-HAN LIAO | The 6th International Conference on Technological Advances of Thin Films & Surface Coatings | | | |
| 2013 | Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study | M. H.Liao | Thin Solid Films | | | |
| 2015 | Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis | M. H.Liao ; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu | IEEE Electron Device Meeting | 214 | 0 | |
