公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy | K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; HAO-HSIUNG LIN | Physica B: Condensed Matter | 1 | 2 | |
1995 | Balun design for uniplanar broad band double balanced mixer | Chiou, Hwann-Kaeo; Chang, Chi-Yang; Lin, Hao-Hsiung | Electronics Letters | 29 | 29 | |
2008 | Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan (OPT’08) | | | |
2009 | Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 7 | |
2008 | Band alignment of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2008 | | | |
2008 | Band alignment of InAsSb/InAsPSb quantum wells | C. J. Wu; H. H. Lin; HAO-HSIUNG LIN | 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) | | | |
2014 | Band discontinuity in InAsPSb alloy system | C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN | MIOMD 2014 infrared optoelectronics: materials and devices | | | |
2003 | Band Gap Reduction in InAsN Alloys | D. K. Shih; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN | Japanese Journal of Applied Physicsic | 67 | 65 | |
2008 | Band structure of dilute nitride GaAsSbN | Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | | | |
1995 | Birefringence of Passive Multi-Quantum-Well Semiconductor Slab Waveguides | Yang, C.C.; Kang, J.; Stegeman, G.I.; Huang, C.-H.; Li, D.-U.; Lin, H.-H.; CHIH-CHUNG YANG ; HAO-HSIUNG LIN | IEEE Photonics Technology Letters | 9 | 9 | |
1994 | Birefringence of Passive Semiconductor Slab Waveguides | Li, D. U.; Huang, Chang-Hsiu; 張宏鈞 ; 林浩雄 ; Yang, C. C.; Kang, J.; Stegeman, G. L.; Chang, Hung-Chun ; Lin, Hao-Hsiung | Ultrfast Optics and Applications Conference | | | |
2014 | Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure | C. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN | 21th Symposium on nano device technology | | | |
2012 | Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs | C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN ; CHIH-CHUNG YANG | Applied Physics Letters | 8 | 8 | |
1982 | Breakdown Voltage of Junction Passivated Power Rectifier | 林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 8th EDMS | | | |
1997 | Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy | Hwang, J.S.; Chou, W.Y.; Hung, M.C.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN | Journal of Applied Physics | 15 | 12 | |
2022 May | Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy | Shih, Ding-Kang; Lin, Hao-Hsiung ; Song, Li-Wei; Chu, Tso-Yu; Yang, T.R. | IEEE International Conference On Indium Phosphide and Related Materials, 2001. | 0 | 0 | |
2007 | Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10 | I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
1988 | The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source | 劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; Lin, Hao-Hsiung | Applied Physics Letters | | | |
1987 | Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source | Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 9 | |
1987 | The Characteristics of Silane Doping of GaAs by MOCVD | 劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; Lin, Hao-Hsiung | 13th EDMS | | | |