公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures | Y. M. Chang; N. A. Chang; H. H. Lin; C. T. Chia; Y. F. Chen; HAO-HSIUNG LIN | The 5th Pacific Rim Conference on Lasers and Electro-Optics | | | |
1994 | OEIC用高速元件之研究 | Lin, Hao-Hsiung | | | | |
1993 | On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver | Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄 ; Tu, Y. K.; Lin, Hao-Hsiung | 19th EDMS | | | |
1993 | On the High Frequency Properties of InGaAs Bipolar Transistors | Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄 ; Lin, Hao-Hsiung | 19th EDMS | | | |
2001 | On the InAs(N)/InGaAs quantum wells | T. Y. Chu; D. K. Shih; HAO-HSIUNG LIN | 2001 Electronics Devices and Materials Symposia | | | |
1996 | On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs) | Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung | Solid-State Electronics | 10 | 10 | |
2017 | One-dimensional nanostructure growth on graphene and devices thereof | HAO-HSIUNG LIN | | | | |
Apr | Opposite Temperature Effects of Quantum-Dot Laser under Dual-Wavelength Operation | Fan, Hsueh-Shih; Su, Yi-Shin; Chu, Fei-Hung; Chang, Fu-Yu; Lin, Hao-Hsiung ; Lin, Ching-Fuh | Applied Physics Letters | 2 | 3 | |
2018 | Optical and structural characteristics of Bridgman grown cubic Zn<inf>1-x</inf>Mn<inf>x</inf>Te alloys | Talwar, D.N.; Becla, P.; Lin, H.-H.; Feng, Z.C.; HAO-HSIUNG LIN | Materials Chemistry and Physics | | | |
2007 | Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures | Wang, J.S.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Nanotechnology | 15 | 13 | |
2021 | Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates | Wang B; HAO-HSIUNG LIN | Superlattices and Microstructures | 7 | 6 | |
2005 | Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells | H. P. Hsu; Y. S. Huang; P.W. Liu; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | OPT2005 | | | |
2011 | Optical characterization of GaAs <inf>0.7</inf>Sb <inf>0.3</inf>/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures | Wu, J.D.; Lin, Y.J.; Huang, Y.S.; Lin, Y.R.; HAO-HSIUNG LIN | AIP Conference Proceedings | | | |
2005 | Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers | C. R. Lu; H. L. Liu; J. R. Lee; C. H. Wu; L. W. Sung; HAO-HSIUNG LIN | Journal of Physics and Chemistry of Solids | 2 | 2 | |
2002 | Optical characterization on InAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; C. W. Chang; H. H. Lin; G. J. Jan; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2004 | Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection | C. H. Yu; K. K. Kao; M. H. Mao; F. Y. Chang; HAO-HSIUNG LIN | OPT2004 | | | |
1993 | Optical Nonlinarities Near Half the Band Gap in Semiconductors and Their Applications | Yang, C. C.; Villencuve, A.; Wigley, P. G.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung | International Conference on Nonlinear Optical Physics and Applications | | | |
2007 | Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy | L. C. Chou; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2007 | The optical properties of (Mn,Ga)As and (Be,Ga)As | Lee, C.S.; Chang, C.C.; Shih, M.F.; Huang, C.C.; Chang, Y.H.; Lin, H.H.; Ma, T.C.; YUAN-HUEI CHANG ; MING-FENG SHIH ; HAO-HSIUNG LIN | AIP Conference Proceedings | 0 | 0 | |
2001 | Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells | Chen, Guan-Ru; Lin, Hao-Hsiung ; Wang, Jyh-Shyang; Shih, Ding-Kang | Journal of Applied Physics | | | |