公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs | Y. R. Chen; HAO-HSIUNG LIN | 40th international symposium on compound semiconductors (ISCS 2013) | | | |
2002 | Raman scattering characterization of InAsN bulk film on (100) InP substrates | D. K. Shih; H. H. Lin; Y. F. Chen; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2010 | Raman scattering in InAsPSb quaternary alloys | J. S. Tzeng; C. J. Wu; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2011 | Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE | K. J. Cheetham; A. Krier; I. Patel; J. S. Tzeng; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | 3 | 3 | |
2016 | Raman scattering in InP <inf>1-x</inf> Sb <inf>x</inf> alloys grown on InAs substrate by gas source MBE | Chang, C.-M.; Tsai, C.-Y.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | | | |
2010 | Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy | J. S. Tzeng; C. J. Wu; C. J. Hong-Liao; HAO-HSIUNG LIN | 2010 international electron devices and materials symposia | | | |
2013 | Raman spectroscopy of GaAsPSb alloys | C. Y. Tsai; Y. C. Chin; HAO-HSIUNG LIN | IEDMS 2013, international electron devices and materials symposium | | | |
1991 | Reactive Ion Etching of GaAs Using CCl2F2 Plasma | Hsu, S. M.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
2018 | Reactive-Ion Etching of Bismuth Thin Film Using CHF3 | Yen-Cheng Ko; Ding-Lun Wu; Che-Wei Yang; Hao-Hsiung Lin; HAO-HSIUNG LIN | International Electron Devices & Materials Symposium IEDMS2018 | | | |
1995 | Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs | Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung | Solid-State Electronics | 8 | 4 | |
2004 | Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers | M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO ; HAO-HSIUNG LIN | Optical and Quantum Electronics | 4 | 4 | |
2003 | Resonant-cavity light-emitting diodes with coupled cavity | L. C. Chou; B. L. Yen; J. D. Juang; H. T. Jan; HAO-HSIUNG LIN | Electron devices and materials symposium | | | |
1998 | Room-temperature 2.2-μM InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy | Wang, J.-S.; Lin, H.-H.; Sung, L.-W.; HAO-HSIUNG LIN | IEEE Journal of Quantum Electronics | | | |
1994 | Room-Temperature Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas | Chen, Y.-H.; Hsu, K.-T.; Chen, K.-L.; Jan, G.-J.; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 12 | 10 | |
2012 | Sb-based zincblende alloys with strong structural disorder | HAO-HSIUNG LIN | Indo-Taiwan workshop on nanodevices | | | |
2018 | Selective area growth of InAs nanowires from SiO<inf>2</inf>/Si(1?1?1) templates direct-written by focused helium ion beam technology | Yang, C.-W.; Chen, W.-C.; Chou, C.; HAO-HSIUNG LIN | Journal of Crystal Growth | | | |
2012 | Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution | S. H. Li; C. J. Wu; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | | | |
1998 | Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy | Chen, M.-C.; Lin, H.-H.; Shie, C.-W.; HAO-HSIUNG LIN | Journal of Applied Physics | | | |
1998 | Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy | Chen, Ming-Chin; Liao, M. C.; Lin, Hao-Hsiung | Journal of Crystal Growth | 4 | 4 | |
2012 | Short channel effects on gallium nitride/gallium oxide nanowire transistors | Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO ; HAO-HSIUNG LIN ; LUNG-HAN PENG ; YUH-RENN WU | Applied Physics Letters | 20 | 19 | |