公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1993 | Ultrafast All-Optical Polarization Switching Near Half the Band Gap in Semiconductors | Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung | Nonlinear Guided-Wave Phenomena | | | |
1996 | An unified GSMBE growth model for GaInAsP on InP and GaAs | Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung | Eighth International Conference on Indium Phosphide and Related Materials, 1996. IPRM '96 | 0 | 0 | |
2007 | Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies | T. T. Chen,; C. L. Cheng,; F. Y. Chang,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN ; YANG-FANG CHEN | Physics Review B | 45 | 47 | |
2004 | Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory | Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN | IEEE Electron Device Letters | | | |
2002 | V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE | L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN | 2001 MRS Fall Meeting | | | |
1998 | Very thin layers of TIP grown on InP using gas source molecular beam epitaxy | Liu, J.-S.; Wang, J.-S.; HAO-HSIUNG LIN | Journal of Crystal Growth | 1 | 2 | |
1998 | Very thin layers of TlP grown on InP using gas source molecular beam epitaxy | Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung | Journal of Crystal Growth | | | |
2011 | X-ray absorption find structures of InPSb alloys | C. J. Wu; K. T. Chen; Z. C. Feng; W. M. Chang; C. C. Yang; HAO-HSIUNG LIN | International photonics conference 2011 (IPC2011) | | | |
2016 | X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD | Xin, J.; Chang, C.M.; Hsueh, C.-H.; Lee, J.-F.; Chen, J.-M.; Lin, H.-H.; Lu, N.; Ferguson, I.T.; Guan, Y.; Wan, L.; Yang, Q.; Feng, Z.C.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | | | |
2010 | X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy | C. J. Wu; Y. R. Lan; L. Y. Chang; Z. C. Feng; HAO-HSIUNG LIN | 2010 Micro-optics conference (MOC'10) | | | |
2014 | X-ray absorption near edge structure of silicon in indium arsenide | M. C. Liu; Z. C. Feng; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
1989 | Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler | Lay, T. S.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | IEEE Journal of Quantum Electronics | | | |
1989 | Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Reflective Diffraction Coupler | Lay, T.-S.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | IEEE Journal of Quantum Electronics | 1 | 0 | |
1999 | 三五族半導體光電材料及元件之研究(I) | 林浩雄 | | | | |
2008 | 三五族多接面疊接太陽電池之研究 | 林浩雄 | | | | |
2008 | 中紅外線光電半導體材料與元件的研究 (新制多年期第1年) | 林浩雄 | | | | |
2008 | 中紅外線化合物半導體材料與元件(2/2) | 林浩雄 | | | | |
1999 | 以分子束磊晶法成長氮化鎵系列材料(I) | 林浩雄 | | | | |
2000 | 以分子束磊晶法成長氮化鎵系列材料(II) | 林浩雄 | | | | |
2001 | 以分子束磊晶法成長氮化鎵系列材料(三) | 林浩雄 | | | | |