公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1990 | Thin-oxide thickness measurement in ellipsometry by a wafer rotation method | JENN-GWO HWU | Solid State Electronics | 1 | 1 | |
2023 | Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5-nm SiO<inf>2</inf>for One-Time Programmable Application | Huang, Sung Wei; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
2016 | Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism | W.C.Kao; J.Y.Chen; J.G.Hwu; JENN-GWO HWU | Applied Physics Letters | 5 | 5 | |
2021 | Transient Current Enhancement in MIS Tunnel Diodes with Lateral Electric Field Induced by Designed High-Low Oxide Layers | Huang S.-W; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
2020 | Transient Two-State Characteristics in MIS(p) Tunnel Diode with Edge-Thickened Oxide (ETO) Structure | Yang, Y.-C.; Lin, K.-W.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | | | |
2009 | Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering | Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 20 | 19 | |
2010 | Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | 15th OptoElectronics and Communications Conference, OECC2010 | | | |
2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
2017 | Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure with Concentric Circular Electrodes Controlled by Designed Substrate Bias | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 3 | |
2015 | Tunneling current induced frequency dispersion in the C-V behavior of ultra-thin oxide MOS capacitors | JENN-GWO HWU | ECS Transactions | 3 | 0 | |
2019 | Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ring | H.J.Li; C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2019 | Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ring | H.J.Li; C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2019 | Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring | Li, H.-J.; Yang, C.-F.; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2012 | Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO 2 | JENN-GWO HWU | Applied Physics Letters | 21 | 20 | |
2016 | Two States Phenomenon Induced by Neighboring Device Coupling Effect in MIS(p) Tunnel Current | W.C.Kao; J.Y.Chen; J.G,Hwu; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
2011 | Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
2012 | Two-state trap-assisted tunneling current characteristics in Al 2O 3/SiO 2/SiC structures with ultrathin dielectrics | JENN-GWO HWU | IEEE Transactions on Nanotechnology | 3 | 3 | |