公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect | C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO | International Electron Device Material Symposium | | | |
1993 | An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices | Tang, M.C.; Sim, J.H.; KuoJB | 1993 IEEE International SOI Conference, 1993 | 1 | 0 | |
1994 | Analytical DC Model for a-Si:H Thin-Film Transistors Using Effective Temperature Approach | Chen S.-S; JAMES-B KUO | Japanese Journal of Applied Physics | 1 | 1 | |
1993 | Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states | Chen, C.S.; KuoJB | Electronics Letters | 3 | 1 | |
2013 | Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary | L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO | IEEE Transactions on Electron Devices | 0 | 0 | |
1995 | Analytical threshold voltage formula including narrow-channel effects for vlsi mesa-isolated fully depleted ultrathin silicon-on-insulator n-channel metal-oxide-silicon devices | Su K.-W; JAMES-B KUO | Japanese Journal of Applied Physics | 11 | 10 | |
1996 | An analytical velocity overshoot model for 0.1 μm N-channel metal-oxide-silicon devices considering energy transport | JAMES-B KUO ; YAO-WEN CHANG ; Chen Y.-G. | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1 | 0 | |
2003 | Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect | M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO | Electron Devices and Material Symposium | | | |
2017 | Author's Reply to "comments on 'A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs'" | Hong C; Zhou J; Wang R; Huang J; Bai W; Kuo J.B; Chen Y.; JAMES-B KUO | IEEE Electron Device Letters | | | |
2013 | Back-Gate Bias Effect of PD SOI NMOS Device Considering BJT | D. H. Lung; J. B. Kuo; JAMES-B KUO | International Conference on EECS | | | |
2014 | Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device | S. K. Hu; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO | IEDMS | | | |
1999 | Bandgap Narrowing | JAMES-B KUO | Wiley Encyclopedia on Electrical Engineering | | | |
1993 | A BiCMOS dynamic divider circuit using a nonrestoring iterative architecture with carry look ahead for CPU VLSI | Kuo, J.B.; Chen, H.P.; Huang, H.J.; KuoJB | IEEE International Symposium on Circuits and Systems, 1993. ISCAS '93 | 0 | 0 | |
1992 | A BiCMOS dynamic full adder circuit for VLSI implementation of high-speed parallel multipliers using Wallace tree reduction architecture | Liao, H.J.; Chen, H.P.; KuoJB | Bipolar/BiCMOS Circuits and Technology Meeting, 1992. | 3 | 0 | |
1992 | BiCMOS dynamic Manchester carry look ahead circuit for high speed arithmetic unit VLSI | Kuo, J.B.; Liao, H.J.; Chen, H.P.; KuoJB | Electronics Letters | | | |
1993 | BiCMOS dynamic minimum circuit using a parallel comparison algorithm for fuzzy controllers | Chen S.S; Chiang C.S; Su K.W; JAMES-B KUO | Electronics Letters | 4 | 2 | |
1994 | A BiCMOS dynamic multiplier using Wallace tree reduction architecture and 1.5 V full-swing BiCMOS dynamic logic circuit | Su, K.W.; Lou, J.H.; KuoJB | IEEE International Symposium on Circuits and Systems, 1994. ISCAS '94 | 5 | 0 | |
1991 | BiCMOS edge detector with correlated-double-sampling readout circuit for pattern recognition neural network | Kuo, J.B.; Chou, T.L.; Wong, E.J.; KuoJB | Electronics Letters | | | |
1991 | A BiCMOS tristate buffer for high-speed microprocessor VLSI | Kuo, J.B.; Liao, H.J.; KuoJB | Fourth Annual IEEE International ASIC Conference and Exhibit, 1991 | 0 | 0 | |
1992 | BICMOS元件電路模擬器 | 郭正邦 ; Kao, James B. | | | | |