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公開日期
標題
作者
來源出版物
scopus
WOS
全文
2005
Energy-Efficient CMOS Large-Load driver circuit with the complementary adiabatic/bootstrap (CAB) technique for Low-Power TFT-LCD system applications
G. Y. Liu; N. C. Wang; JAMES-B KUO
ISCAS
1
0
2005
Evolution of bootstrap techniques in low-voltage CMOS digital VLSI circuits for SOC applications
J. B. Kuo; JAMES-B KUO
IWSOC
8
0
2004
Evolution of low-voltage CMOS digital VLSI circuits using bootstrap technique
KuoJB
Future of Electron Devices, 2004. International Meeting for
0
0
2011
Evolution of SOI CMOS Devices and Circuits for Low0Power/ Low Vltage SOC Applications
J. B. Kuo; JAMES-B KUO
Electron Devices Innovation Symposium
2012
Floating-Body Kink Effect: Ply-Si TFT versus SOI CMOS
T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
Eurosoi Conference
2005
Floating-Body Kink-Effect RElated Capacitance Behavior of Nanometer PD SOI NMOS Devices
G. S. Lin; J. B. Kuo; JAMES-B KUO
EDMS
2015
Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect
S. K. Hu; J. B. Kuo; Y. J. Chen; JAMES-B KUO
Spanish Conference on Electron Devices
0
0
2009
Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device
H. J. Hung; J. I. Lu; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
EUROSOI
0
0
2009
Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device
H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO
International Semiconductor Devices Research Symposium
0
2012
Foating-Body Kink-Effect Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT
T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
IEEE Transactions on Electron Devices
8
6
2006
Fringing Effects of Nanometer SOI CMOS Devices
J. B. Kuo; JAMES-B KUO
NIEL
2002
Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer
S. C. Lin; J. B. Kuo; JAMES-B KUO
IEEE SOI Conference Proc
2
0
2005
Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulation
G. S. Lin; J. B. Kuo; JAMES-B KUO
EDSM
2012
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Solid State Electronics
5
4
2013
Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect
A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
EUROSOI
2001
Future Trends on SOI CMOS VLSI
J. B. Kuo; JAMES-B KUO
Canadian Semiconductor Technology Conference
2006
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulation
Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO
IEEE Transactions on Electron Devices
6
5
2004
Gate Misalignment Effect Related Capacitance Behavior of a 100nm DG FD SOI NMOS Device with n+/p+ Poly Top/Bottom Gate
J. B. Kuo; C. H. Hsu; C. P. Yang; JAMES-B KUO
IEEE Conference on Electron Devices and Solid-State Circuits
3
0
2004
Gate Misalignment Effects of DG SOI NMOS Devices
J. B. Kuo; JAMES-B KUO
VLSI/CAD Conference
2010
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Microelectronics Reliability
5
6