公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device | D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO | ISIC | 1 | 0 | |
2006 | Partitioned gate tunnelling current model considering distributed effect for CMOS devices with ultra-thin (1 nm) gate oxide | C. H. Lin; K. W. Su; S. Liu; JAMES-B KUO | IEE Electronics Letters | 11 | 7 | |
2004 | PD SOI-Technology SPICE Models | Kuo, James B. ; Lin, Shih-Chia | Low-Voltage SOI CMOS VLSI Devices and Circuits | | | |
2004 | PD SOI-Technology SPICE Models | J. B. Kuo; S. C. Lin; JAMES-B KUO | Wiley's Texbook by J. B. Kuo: SOI CMOS VLSI Devices | 0 | 0 | |
2014 | Power consumption optimization methodology (PCOM) for low-power/ low-voltage 32-bit microprocessor circuit design via MTCMOS | C. B. Hsu; J. B. Kuo; JAMES-B KUO | MWSCAS | 1 | 0 | |
1992 | A radical-partitioned coded block adaptive neural network structure for large-volume Chinese characters recognition | Kuo, J.B.; Mao, M.W.; KuoJB | International Joint Conference on Neural Networks, 1992 IJCNN | 3 | 0 | |
1994 | A radical-partitioned neural network system using a modified Sigmoid function and a weight-dotted radical selector for large-volume Chinese characters recognition VLSI | Kuo, J.B.; Chen, B.Y.; Mao, M.W.; KuoJB | IEEE World Congress on Computational Intelligence | 0 | 0 | |
1993 | Saturation region model for a-Si:H TFTs using a quasi-two-dimensional approach | Chen, S.S.; KuoJB | Electronics Letters | 2 | 1 | |
1999 | Semiconductor R&D in Taiwan | JAMES-B KUO | Association of East Asian Research Universities 1st Microelectronics Workshop | | | |
2009 | Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device | J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO | EUROSOI | | | |
2010 | Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device | H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO | Solid-State Electronics | 1 | 1 | |
2008 | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Transactions Electron Devices | 3 | 1 | |
1992 | Simple analytical model for short-channel MOS devices | Chow, H.-C.; Feng, W.-S.; JAMES-B KUO | Circuits, Devices and Systems, IEE Proceedings G | 6 | | |
2003 | SOI CMOS VLSI | JAMES-B KUO | Fellow Series Meeting | | | |
2000 | SPICE compact modeling of PD-SOI CMOS devices | Kuo, J.B.; KuoJB | Electron Devices Meeting, 2000 IEEE Hong Kong | 0 | 0 | |
2007 | STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices | I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO | IEEE International Semicondcutor Device Research Symp (ISDRS) | 3 | 0 | |
2008 | STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEDMS | | | |
2008 | STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices | J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | ICSICT | | | |
2008 | STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices | I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | European SOI Conference | | | |
1991 | A structured adaptive neural network for pattern recognition VLSI | Kuo, J.B.; Wong, E.J.; Chen, C.C.; Hsiao, C.C.; KuoJB | IEEE International Sympoisum on Circuits and Systems, 1991 | 0 | 0 | |