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公開日期
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作者
來源出版物
scopus
WOS
全文
1999
Temperature-Dependent Kink Effect Model for Partially-Depleted SOI NMOS Devices
S. C Lin; JAMES-B KUO
IEEE Transactions on Electron Devices
32
25
2002
The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure
J. B. Kuo; S. C. Lin; JAMES-B KUO
Hong Kong Electron Devices Meeting
2
0
2008
Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects
J. S. Su; J. B. Kuo; JAMES-B KUO
IEDMS
2004
Trends on CMOS VLSI
JAMES-B KUO
International Meeting on Nanotechnology
2007
Triple Threshold Static Power Minimization in High-Level Synthesis of VLSI CMOS
H. Chen; J. B. Kuo; M. Syrzycki; JAMES-B KUO
Power and Timing Modeling and Optimization Conf (PATMOS)
2007
Triple-Threshold Static Power Minimization Technique in High-Level Synthesis for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology
H. I. Chen; E. K. Loo; J. B. Kuo; M. J. Syrzycki; JAMES-B KUO
Canadian Conference on Electrical and Computer Engineering
7
0
1995
Turn-off transient analysis of a double diffused metal-oxide-semiconductor device considering quasi saturation
Liu C.-M; JAMES-B KUO
Japanese Journal of Applied Physics
5
1
2019
Turn-OFF transient analysis of superjunction IGBT
Wang, Z.; Zhang, H.; Kuo, J.B.; JAMES-B KUO
IEEE Transactions on Electron Devices
7
4
2012
Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect
S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Eurosoi Conference
2013
Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
International Electron Devices and Material Symposium
2013
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
International Semiconductor Devices Research Symposium
1990
Turn-on transient imposed extrinsic base consideration in BiNMOS transistors
Chen, Yen-Wen; Kuo, James
Custom Integrated Circuits Conference, 1990.
0
0
2003
Ultra-low-voltage SOI CMOS Inverting Driver Circuit Using Effective Charge Pump Based on Bootstrap Technique
J. H. T. Chen; JAMES-B KUO
Electronics Letters
5
4
2017
A Unified Continuous and Discrete Model for Double-Gate MOSFETs with Spatially Varying or Pulsed Doping Profiles
Hong C; Zhou J; Cheng Q; Zhu K; Kuo J.B; Chen Y.; JAMES-B KUO
IEEE Journal of the Electron Devices Society
7
5
1996
A velocity-overshoot capacitance model for 0.1 μm MOS transistors
Kuo, J. B.; Chang, Y. W.; Lai, C. S.; KuoJB
Solid-State Electronics
1992
二微米BICMOS技術整合
郭正邦
1993
低溫雙載金氧半元件模型用在電路模擬
郭正邦
1999
參加第九屆加拿大半導體技術研討會
郭正邦
1998
微型諧振陀螺儀之研發(2/3)─子計畫三:使用金氧半技術之微電機陀螺儀系統之精準元件模型
郭正邦
2004
用於低電壓高速超大型積電之100 奈米絕緣體上矽具LDD 之 金氧半SPICE 元件模型(1/3)
郭正邦
41
35