公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film | Hsu, W.-L.; Pai, Y.-H.; Meng, F.-S.; Liu, C.-W.; GONG-RU LIN ; CHEE-WEE LIU | Applied Physics Letters | 17 | 15 | |
2009 | Narrow-band metal-oxide-semiconductor photodetector | Ho, W.S.; Lin, C.-H.; Cheng, T.-H.; Hsu, W.W.; Chen, Y.-Y.; Kuo, P.-S.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 9 | 6 | |
2011 | Nearly defect-free Ge gate-all-around FETs on Si substrates | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2017 | Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide | MING-HAN LIAO ; CHEE-WEE LIU | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 | 4 | 0 | |
2014 | New materials for post-Si computing | Liu, C.W.; \\Ostling, M.; Hannon, J.B.; CHEE-WEE LIU | MRS Bulletin | 15 | 18 | |
2019 | Ni, Pt, and Ti stanogermanide formation on Ge<inf>0.92</inf>Sn<inf>0.08</inf> | Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-V.; Lu, F.-L.; Liu, C.W.; Holmes, J.D.; Duffy, R.; CHEE-WEE LIU | 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 | 0 | 0 | |
Dec | Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si | CHING-FUH LIN ; MIIN-JANG CHEN ; Liang, Eih-Zhe; Liu, W.T.; Chang, S.T.; CHEE-WEE LIU | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 | |
2001 | Novel methods to incorporate deuterium in the MOS structures | Lee, M.H.; Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 7 | 7 | |
2004 | Novel MIS Ge-Si quantum-dot infrared photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN | IEEE Electron Device Letters | 21 | 21 | |
2000 | Novel photodetector using MOS tunneling structures | Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C.; CHEE-WEE LIU | IEEE Electron Device Letters | 70 | 62 | |
2001 | Novel photodetectors using metal-oxide-silicon tunneling structures | Hsu, B.-C.; Liu, W.T.; Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | 0 | 0 | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |
2007 | Novel transport mechanism of SiGe dot MOS tunneling diodes | Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; Liu, C.W.; CHEE-WEE LIU | 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | 0 | 0 | |
2020 | Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels | Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU | Semiconductor Science and Technology | 1 | 1 | |
2019 | Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7 | Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Tsou, Y.-J.; Liu, Y.-C.; Tu, C.-T.; Liu, C.W.; CHEE-WEE LIU | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | 2 | 0 | |
2009 | Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2 /V s | Lu, T.M.; Tsui, D.C.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 50 | 53 | |
2020 | On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges | Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 17 | 15 | |
2020 | Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02nGAAFETs | Lin, S.-Y.; Liu, H.-H.; Tu, C.-T.; Huang, Y.-S.; Lu, F.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 2 | 2 | |
2003 | Optimal SiGe:C HBT module for BiCMOS applications | Lai, L.S.; Liang, C.S.; Chen, P.S.; Hsu, Y.M.; Liu, Y.H.; Tseng, Y.T.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; Rosenblad, C.; Buschbaum, T.; Buschbeck, M.; Ramm, J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 3 | 0 | |
2009 | Optimization of a saddle-like FinFET by device simulation for sub-50nm DRAM application | Chang, H.-C.; Kuo, P.-S.; Peng, C.-Y.; Chen, Y.-T.; Chen, W.-Y.; Liu, C.W.; CHEE-WEE LIU | 2009 International Semiconductor Device Research Symposium, ISDRS '09 | 2 | 0 | |