公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity | CHAO-HSIN WU ; Wu, C.H.; Tan, F.; Wu, M.K.; Feng, M.; Holonyak Jr. N.; CHAO-HSIN WU | Journal of Applied Physics | | | |
2010 | The effect of mode spacing on the speed of quantum-well microcavity lasers | CHAO-HSIN WU ; Wu, C.H.; Tan, F.; Feng, M.; Holonyak, N.; CHAO-HSIN WU | Applied Physics Letters | | | |
2015 | The Effect of Voltage-Dependent Charge-Removing Mechanism on the Optical Modulation Bandwidths of Light-Emitting Transistors | CHAO-HSIN WU ; Chern, Y.; Chang, C.; CHAO-HSIN WU | IEEE Transactions on Electron Devices | | | |
2014 | The influence of quantum-well depth on the optical modulation bandwidth of light emitting transistors | CHAO-HSIN WU ; Hsu, Y.-F.; Yang, H.-H.; CHAO-HSIN WU | OptoElectronics and Communication Conference, OECC 2014 and Australian Conference on Optical Fibre Technology, ACOFT 2014 | | | |
2019 | Theoretical analysis on optical frequency response of tunnel-junction transistor lasers operated in different configurations | Tung, C.-T.; Chang, S.-W.; CHAO-HSIN WU | Journal of Applied Physics | | | |
2018 | Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
2020 | Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; CHAO-HSIN WU ; YUH-RENN WU | Optical and Quantum Electronics | 2 | 2 | |
2019 | Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU | Opto-electronics Review | 1 | 1 | |
2019 | Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.-Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
2016 | Theory for voltage modulation of transistor lasers using Franz-Keldysh absorption in the presence of optoelectronic feedback | Chang, C.-H.; Chang, S.-W.; CHAO-HSIN WU | Optics Express | | | |
2021 | Thermal Dynamic Performance and Integrated Optoelectronic System with InGaP/GaAs Quantum Well Light-Emitting Transistors (LETs) | Hsueh L.-C; Lin H.-Y; Kumar M; CHAO-HSIN WU | Asia Communications and Photonics Conference, ACP | 1 | | |
2019 | Thermally-enhanced current gain of quantum-well heterojunction bipolar transistor | Chang, Yun-Hsuan; Chou, Yung-Lin; Chang, Shu-Wei; SHU-WEI CHANG ; CHAO-HSIN WU | Journal of Applied Physics | 4 | 4 | |
2019 | Thermoelectrically Cooled nBn T2SLs InAs/InAsSb/B-AlAsSb MWIR Detector | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.-H.; CHAO-HSIN WU ; YUH-RENN WU | 2019 Compound Semiconductor Week, CSW 2019 - Proceedings | 0 | 0 | |
2020 | A Thermoelectrically Cooled nBn Type-II Superlattices InAs/InAsSb/B-AlAsSb Mid-Wave Infrared Detector | Martyniuk P; Michalczewski K; Tsai T.-Y; Wu C.-H; Wu Y.-R.; CHAO-HSIN WU | Physica Status Solidi (A) Applications and Materials Science | | | |
2015 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides | Yeh, P.-C.; Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; CHAO-HSIN WU ; LUNG-HAN PENG | Applied Physics Express | 4 | 4 | |
2019 | Threshold voltage modulation of enhancement-mode InGaAs schottky-gate Fin-HEMTs | Chang, L.-C.; Dai, C.-J.; CHAO-HSIN WU | IEEE Electron Device Letters | | | |
2009 | Tilted-charge high speed (7 GHz) light emitting diode | CHAO-HSIN WU ; Walter, G.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak Jr. |N.; CHAO-HSIN WU | Applied Physics Letters | | | |
2021 | Top-gate transistors fabricated on epitaxially grown molybdenum disulfide and graphene hetero-structures | Tsai P.-C; Huang H.-C; Chiang C.-T; CHAO-HSIN WU ; Lin S.-Y. | Applied Physics Express | 1 | 2 | |
2016 | Transferring-free top-gated graphene transistors fabricated on graphene films directly grown on sapphire substrates | Hwai, S.; Wu, C.-H.; Wu, C.-R.; Liao, K.-C.; Lin, S.-Y.; CHAO-HSIN WU | International Journal of Electrical Engineering | | | |
2020 | Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures | Zhang Y.-W; Li J.-Y; Wu C.-H; Chang C.-Y; Chang S.-W; Shih M.-H; Lin S.-Y.; CHAO-HSIN WU | Scientific Reports | 5 | | |