| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1996 | Ethylene may be involved in abortion of the maize caryopsis | Cheng, C.-Y.; Lur, H.-S. | Physiologia Plantarum | 70 | 63 | |
| 2005 | Expression of a bi-functional and thermostable amylopullulanase in transgenic rice seeds leads to autohydrolysis and altered composition of starch | Chiang, C.-M.; Yeh, F.-S.; Huang, L.-F.; Tseng, T.-H.; Chung, M.-C.; Wang, C.-S.; Lur, H.-S. ; Shaw, J.-F.; Yu, S.-M. | Molecular Breeding | 34 | 26 | |
| 2013 | Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 18 | 18 | |
| 2012 | Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating | Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
| 2012 | Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
| 2023 | Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques | Hong, TC; Lu, WH; Wang, YH; JIUN-YUN LI ; Lee, YJ; Chao, TS | IEEE TRANSACTIONS ON ELECTRON DEVICES | 0 | 0 | |
| 2019 | Fabrication of omega-gated negative capacitance finfets and SRAM | Sung, P.-J.; Su, C.-J.; Lu, D.D.; Luo, S.-X.; Kao, K.-H.; Ciou, J.-Y.; Jao, C.-Y.; Hsu, H.-S.; Wang, C.-J.; Hong, T.-C.; Liao, T.-H.; Fang, C.-C.; Wang, Y.-S.; Huang, H.-F.; Li, J.-H.; Huang, Y.-C.; Hsueh, F.-K.; Wu, C.-T.; Ma, W.C.-Y.; Huang, K.-P.; Lee, Y.-J.; Chao, T.-S.; Li, J.-Y.; Wu, W.-F.; Yeh, W.-K.; Wang, Y.-H.; JIUN-YUN LI | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | 3 | 0 | |
| 2019 | First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications | Chang, S.-W.; Li, J.-H.; Huang, M.-K.; Huang, Y.-C.; Huang, S.-T.; Wang, H.-C.; Huang, Y.-J.; Wang, J.-Y.; Yu, L.-W.; Huang, Y.-F.; Hsueh, F.-K.; Sung, P.-J.; Wu, C.-T.; Ma, W.C.-Y.; Kao, K.-H.; Lee, Y.-J.; Lin, C.-L.; Chuang, R.W.; Huang, K.-P.; Samukawa, S.; Li, Y.; Lee, W.-H.; Chu, T.-Y.; Chao, T.-S.; Huang, G.-W.; Wu, W.-F.; JIUN-YUN LI ; Shieh, J.-M.; Yeh, W.-K.; Wang, Y.-H.; Lu, D.D.; Wang, C.-J.; Lin, N.-C.; Su, C.-J.; Lo, S.-H.; Huang, H.-F. | Technical Digest - International Electron Devices Meeting, IEDM | 36 | 0 | |
| 2021 | First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications | Chang S.-W; Lu T.-H; Yang C.-Y; Yeh C.-J; Huang M.-K; Meng C.-F; Chen P.-J; Chang T.-H; Chang Y.-S; Jhu J.-W; Hong T.-Z; Ke C.-C; Yu X.-R; Lu W.-H; Baig M.A; Cho T.-C; Sung P.-J; Su C.-J; Hsueh F.-K; Chen B.-Y; Hu H.-H; Wu C.-T; Lin K.-L; Ma W.C.-Y; Lu D.-D; Kao K.-H; Lee Y.-J; Lin C.-L; Huang K.-P; Chen K.-M; Li Y; Samukawa S; Chao T.-S; Huang G.-W; Wu W.-F; Lee W.-H; JIUN-YUN LI ; Shieh J.-M; Tarng J.-H; Wang Y.-H; Yeh W.-K. | Technical Digest - International Electron Devices Meeting, IEDM | 3 | 0 | |
| 2020 | First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT) | Hong T.-Z; JIUN-YUN LI et al. | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
| 2022 | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure | Wang, Xuejing; Lin, Yung Chen; Tai, Chia Tse; Lee, Seok Woo; Lu, Tzu Ming; Shin, Sun Hae Ra; Addamane, Sadhvikas J.; Sheehan, Chris; JIUN-YUN LI ; Kim, Yerim; Yoo, Jinkyoung | APL Materials | 0 | 0 | |
| 2019 | Gate-defined quantum dots in Ge/SiGe quantum wells as a platform for spin qubits | Hardy, W.J.; Su, Y.-H.; Chuang, Y.; Maurer, L.N.; Brickson, M.; Baczewski, A.; Li, J.-Y.; Lu, T.-M.; Luhman, D.R.; JIUN-YUN LI | ECS Transactions | 2 | 0 | |
| 2017 | GeSn N-FinFETs and NiGeSn contact formation by phosphorus implant | Chuang, Y.; Huang, H.-C.; Li, J.-Y.; JIUN-YUN LI | 2017 Silicon Nanoelectronics Workshop, SNW 2017 | 2 | 0 | |
| 2012 | Heat dissipation consideration of high-power mid-infrared quantum cascade laser arrays | Chen, X.; Cheng, L.; Guo, D.; Li, J.-Y.; Choa, F.-S.; JIUN-YUN LI | 2012 Conference on Lasers and Electro-Optics, CLEO 2012 | | | |
| 2021 | High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls | Hou W.-C; Shih P.-C; Wu B.B.-R; HAO-HSIUNG LIN ; JIUN-YUN LI | IEEE Transactions on Electron Devices | 2 | 1 | |
| 2012 | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
| 2019 | High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing | Liu, J.-Y.; Chiu, P.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
| 2019 | A High I<inf>ON</inf>/I<inf>OFF</inf> Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation | Liu, J.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 | 0 | 0 | |
| 2017 | High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications | Lee, Y.-J.; Hong, T.-C.; Hsueh, F.-K.; Sung, P.-J.; Chen, C.-Y.; Chuang, S.-S.; Cho, T.-C.; Noda, S.; Tsou, Y.-C.; Kao, K.-H.; Wu, C.-T.; Yu, T.-Y.; Jian, Y.-L.; Su, C.-J.; Huang, Y.-M.; Huang, W.-H.; Chen, B.-Y.; Chen, M.-C.; Huang, K.-P.; Li, J.-Y.; Chen, M.-J.; Li, Y.; Samukawa, S.; Wu, W.-F.; Huang, G.-W.; Shieh, J.-M.; Tseng, T.-Y.; Chao, T.-S.; Wang, Y.-H.; MIIN-JANG CHEN ; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
| 2016 | High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential | Lu, T.M.; Laroche, D.; Huang, S.-H.; Chuang, Y.; JIUN-YUN LI ; CHEE-WEE LIU ; JIUN-YUN LI | Scientific Reports | 2 | 2 | |
