公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si | CHI-TE LIANG ; YANG-FANG CHEN | Japanese Journal of Applied Physics Part 1 | 7 | 7 | |
1996 | Effect of disorder-induced band mixing on the conduction-band effective mass of InAIGaAs alloys lattice matched to InP | YANG-FANG CHEN | Journal of Applied Physics | 11 | 11 | |
1992 | Effect of hydrogenation on deep-level traps in InP on GaAs | YANG-FANG CHEN | Journal of Applied Physics | 6 | 6 | |
2010 | Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells | YANG-FANG CHEN ; Lai, K. Y.; Lin, G. J.; Lai, Y.-L.; Chen, Y. F.; He, J. H. | Applied Physics Letters | 87 | 82 | |
2012 | Effect of Lorentz local field for optical second order nonlinear susceptibility in ZnO nanorod | Zhuo, G.-Y.; Hsu, K.-J.; Su, T.-Y.; Huang, N.-H.; YANG-FANG CHEN ; SHI-WEI CHU | Journal of Applied Physics | 6 | 7 | |
2006 | Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells | CHI-TE LIANG ; YANG-FANG CHEN | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 18 | 17 | |
2004 | Effective mass of InN epilayers | YANG-FANG CHEN | Applied Physics Letters | 132 | 127 | |
1996 | Effective mass of two-dimensional electron gas in δ-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells | YANG-FANG CHEN | Journal of Applied Physics | 6 | | |
2007 | Effective mass of two-dimensional electron gas in δ-doped Al<inf>0.48</inf>In<inf>0.52</inf>As/Ga<inf>0.47</inf>In<inf>0.53</inf>As quantum wells | Lo, I.; YANG-FANG CHEN et al. | Journal of Applied Physics | 6 | 6 | |
2015 | Effects of a thermally stable chlorophyll extract from diatom algae on surface textured Si solar cells | YANG-FANG CHEN | RSC Advances | 6 | 3 | |
1999 | Effects of alloy potential fluctuations in InGaN epitaxial films | Lin, T.Y.; JEN-CHEN FAN ; YANG-FANG CHEN | Semiconductor Science and Technology | | | |
2013 | Effects of band offset and nonparabolicity on the effective mass of two-dimensional electron gases in modulation-δ-doped As-based heterostructures | Dai, Y.; YANG-FANG CHEN et al. | Physical Review B - Condensed Matter and Materials Physics | 6 | 6 | |
1997 | Effects of band offset and nonparabolicity on the effective mass of two-dimensional electron gases in modulation-δ-doped Ga0.47In0.53As-based heterostructures | YANG-FANG CHEN | Physical Review B - Condensed Matter and Materials Physics | 6 | | |
2011 | Effects of bifunctional linker on the optical properties of ZnO nanocolumn-linker-CdSe quantum dots heterostructure | Zeng T.-W.; Liu I.-S.; Huang K.-T.; Liao H.-C.; Chien C.-T.; Wong D.K.P.; Chen C.-W.; Wu J.-J.; Chen Y.-F.; YANG-FANG CHEN ; WEI-FANG SU ; CHUN-WEI CHEN | Journal of Colloid and Interface Science | 17 | 17 | |
1993 | Effects of hydrogenation on electrical properties of InP grown on GaAs by the photochemical vapor deposition system | YANG-FANG CHEN | Materials Chemistry and Physics | 1 | 1 | |
2012 | Effects of metal-free conjugated oligomer as a surface modifier in hybrid polymer/ZnO solar cells | Chen, C.-T.; Hsu, F.-C.; Sung, Y.-M.; Liao, H.-C.; Yen, W.-C.; Su, W.-F.; Chen, Y.-F.; YANG-FANG CHEN ; WEI-FANG SU | Solar Energy Materials and Solar Cells | 20 | 19 | |
2004 | Effects of proton irradiations on GaN-based materials | YANG-FANG CHEN | Physica Status Solidi C: Conferences | 14 | 0 | |
2006 | Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers | YANG-FANG CHEN | Journal of Physics Condensed Matter | 10 | 10 | |
2020 | Efficient Charge Transfer and Carrier Extraction in All-Polymer Solar Cells Using an Acceptor Filler | Hsu, F.-C.; Luo, J.-W.; Su, Y.-W.; Yang, C.-S.; Lin, Y.-A.; Lin, J.-Y.; Chang, C.-Y.; Chen, Y.-F.; Li, C.-P.; YANG-FANG CHEN | ACS Applied Energy Materials | 5 | 5 | |
2011 | Efficient light harvesting and carrier transport in PbS quantum dots/silicon nanotips heterojunctions | YANG-FANG CHEN | Journal of Physics D: Applied Physics | 21 | 18 | |