公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1988 | Preparation Of High Tc And Jc Films Of Ba2YCu3O7_8 By Laser Evaporation And Observation Of Superconductivity In A 27Å Phase | M; ich, ML; DeSantolo, AM; Fleming, RM; Marsh, P; Martinez-Mir; a, L; Nakahara, S; Sunshine, S; Kwo, JR; Hong, M; Boone, T; others; MINGHWEI HONG | 1988 Semiconductor Symposium | | | |
2001 | Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy | Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
2001 | Probing the microscopic compositions at Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface by core level photoelectron spectroscopy | Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 11 | 11 | |
1994 | Process for removing surface contaminants from III-V semiconductors | Choquette, Kent D; Freund, Robert S; Hong, Minghwei; Mannaerts, Joseph P; MINGHWEI HONG | | | | |
1994 | Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films | MINGHWEI HONG | Applied Physics Letters | | | |
2000 | Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | Hong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 62 | 60 | |
2001 | Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Opila, RL; Muller, DA; Chu, SNG; Sapjeta, BJ; Lay, TS; others; MINGHWEI HONG | Journal of Applied Physics | | | |
2001 | Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
1988 | Properties of In Situ Superconducting Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x Films by Molecular Beam Epitaxy With an Activated Oxygen Source | Kwo, J; Hong, M; Trevor, DJ; MINGHWEI HONG | Science and Technology of Thin Film Superconductors-Proceedings | | | |
2012 | PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | | | |
1989 | Properties of in-Situ Superconducting Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | | | |
1985 | Properties of rare-earth metal superlattice grown by molecular-beam epitaxy | Kwo, J; Gyorgy, EM; Hong, M; Lowe, WP; McWhan, DB; Superfine, R; MINGHWEI HONG | Journal of Applied Physics | | | |
1989 | Properties of superconducting Tl 2 Ba 2 Ca 2 Cu 3 O 10 films by sputtering | Hong, M; Kwo, J; Chen, CH; Kortan, AR; Bacon, DD; Liou, SH; MINGHWEI HONG | Thin Solid Films | | | |
2011 | Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)] | Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Pushing the material limit and physics novelty in high kappa's/high carrier mobility semiconductors for post Si CMOS | Hong, Minghwei; MINGHWEI HONG | APS Meeting Abstracts | | | |
2014 | Pushing the Material Limits in High Kappa Dielectrics on High Carrier Mobility Semiconductors for Science/Technology Beyond Si CMOS and More | Hong, Minghwei; Kwo, JR; MINGHWEI HONG | | | | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 188 | 212 | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |