公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 188 | 212 | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
1987 | Raman detection of the superconducting gap in Ba-Y-Cu-O superconductors | Lyons, KB; Liou, Sy\\_Hwang; Hong, M; Chen, HS; Kwo, J; Negran, TJ; MINGHWEI HONG | Physical Review B | | | |
2000 | RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100) | Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | | | |
2003 | Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor | Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
2003 | Rapid post-metallization annealing effects on high-k Y<inf>2</inf>O<inf>3</inf>/Si capacitor | Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 9 | | |
1985 | Reactive diffusion and superconductivity of Nb3Al multilayer films | V; enberg, JM; Hong, M; Hamm, RA; Gurvitch, M; MINGHWEI HONG | Journal of applied physics | | | |
2012 | Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition | Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition | Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 48 | 48 | |
1996 | Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG | Applied Physics Letters | 60 | 63 | |
2015 | Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs (111) A-2$\\times$ 2 from atomic layer deposition | Fanchiang, Yu-Ting; Chiang, Tsung-Hung; Pi, Tun-Wen; Wertheim, Gunther K; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Applied Physics Express | | | |
2015 | Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition | Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 0 | 0 | |
1995 | RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH | Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG | Compound Semiconductors 1994 | | | |
1991 | Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates | Wang, YH; Tai, K; Hsieh, YF; Chu, SNG; Wynn, JD; Hong, M; Fischer, RJ; Cho, AY; MINGHWEI HONG | Journal of Crystal Growth | | | |
1993 | Relative intensity noise of vertical cavity surface emitting lasers | Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J; Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
2017 | Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance | Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 3 | 3 | |
1996 | Reliability studies of wafer-bonded InGaAs PIN photodetectors on GaAs substrates | Ejeckam, FE; Chua, CL; Zhu, Z-H; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, Ritesh; MINGHWEI HONG | Lasers and Electro-Optics, 1996. CLEO'96 | | | |
1993 | Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching | Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Research advances on III-V MOSFET electronics beyond Si CMOS | Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
1980 | Research on the Monolithic Process of Making A15 Superconducting Materials | Hong, M; Dietderich, D; Morris Jr, JW; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | | | |